SCHEMBL705082

SCHEMBL705082

CCCCc1ccccc1[SiH2]OC(C)(C)C

nearest known ligand 0.38

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
LIPG Q9Y5X9 1/20 0.38
CYP3A4 P08684 1/20 0.36
CYP2D6 P10635 1/20 0.36
CYP2C9 P11712 1/20 0.36
ALOX5 P09917 1/20 0.34
PTGS2 P35354 1/20 0.34
TLR8 Q9NR97 1/20 0.33
THRA P10827 1/20 0.33
THRB P10828 1/20 0.33
NR1H2 P55055 1/20 0.32
NR1H3 Q13133 1/20 0.32
TYR P14679 1/20 0.32
PPARA Q07869 1/20 0.31
HTR1A P08908 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707831 0.86 PTGS2 (0.35) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL706208 0.82 GABRA1 (0.39)
SCHEMBL6125428 0.79 LIPG (0.40) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL703152 0.77 LIPG (0.38) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL704058 0.75 LTB4R (0.30)
SCHEMBL6125424 0.75 LIPG (0.46) LIPGALOX5PTGS2TLR8THRA
SCHEMBL704395 0.74 PPARA (0.42) LIPGCYP3A4CYP2D6CYP2C9PTGS2
SCHEMBL6125412 0.73 LIPG (0.49) LIPGALOX5PTGS2THRATHRB
SCHEMBL704629 0.73 LIPG (0.43) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL713126 0.73 LIPG (0.43) LIPGCYP3A4CYP2D6CYP2C9ALOX5

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed