SCHEMBL707770

SCHEMBL707770

CCC[Si](OC(C)=O)(c1ccccc1)c1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.39
MTNR1A P48039 7/20 0.38
MTNR1B P49286 7/20 0.38
MAPT P10636 1/20 0.38
LMNA P02545 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.37
CES2 O00748 2/20 0.35
CES1 P23141 2/20 0.35
PTGS2 P35354 2/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702608 0.91 ALDH1A1 (0.42) ALDH1A1MTNR1AMTNR1BMAPTL3MBTL1
SCHEMBL6554058 0.90 PTGS2 (0.39) ALDH1A1L3MBTL1CES2CES1PTGS2
SCHEMBL708241 0.87 L3MBTL1 (0.41) ALDH1A1MTNR1AMTNR1BMAPTL3MBTL1
SCHEMBL704041 0.87 L3MBTL1 (0.41) ALDH1A1MTNR1AMTNR1BMAPTL3MBTL1
SCHEMBL6545706 0.87 NAAA (0.43) ALDH1A1LMNACES2CES1PTGS2
SCHEMBL705572 0.85 ALDH1A1 (0.41) ALDH1A1MTNR1AMTNR1BMAPTLMNA
SCHEMBL703232 0.84 ALDH1A1 (0.40) ALDH1A1MTNR1AMTNR1BMAPTLMNA
SCHEMBL706299 0.83 ALDH1A1 (0.42) ALDH1A1MTNR1AMTNR1BMAPTLMNA
SCHEMBL705416 0.82 ALDH1A1 (0.39) ALDH1A1MTNR1AMTNR1BMAPTLMNA
SCHEMBL705553 0.77 PTGS2 (0.40) ALDH1A1L3MBTL1CES2CES1PTGS2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed