SCHEMBL705143

SCHEMBL705143

CC[Si](CC)(OC(C)=O)c1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.42
MAPT P10636 1/20 0.41
CES2 O00748 2/20 0.39
CES1 P23141 2/20 0.39
MTNR1A P48039 2/20 0.37
MTNR1B P49286 2/20 0.37
TSHR P16473 4/20 0.36
ELANE P08246 1/20 0.36
LMNA P02545 1/20 0.36
KDM4E B2RXH2 1/20 0.36
ESR1 P03372 1/20 0.36
ITGB3 P05106 1/20 0.36
ITGA2B P08514 1/20 0.36
HMGB1 P09429 1/20 0.36
HPGD P15428 1/20 0.36
GGT1 P19440 1/20 0.36
PTGS1 P23219 1/20 0.36
PTGS2 P35354 1/20 0.36
BLM P54132 1/20 0.36
NAPRT Q6XQN6 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705215 0.90 ESR1 (0.37) ALDH1A1TSHRLMNAESR1HPGD
SCHEMBL703232 0.85 ALDH1A1 (0.40) ALDH1A1MAPTCES2CES1MTNR1A
SCHEMBL704102 0.82 ALDH1A1 (0.41) ALDH1A1MAPTCES2CES1MTNR1A
SCHEMBL705572 0.82 ALDH1A1 (0.41) ALDH1A1MAPTCES2CES1MTNR1A
SCHEMBL705553 0.82 PTGS2 (0.40) ALDH1A1CES2CES1TSHRPTGS2
SCHEMBL132756 0.77 CES2 (0.43) ALDH1A1MAPTCES2CES1MTNR1A
SCHEMBL132933 0.77 CES2 (0.43) ALDH1A1MAPTCES2CES1MTNR1A
SCHEMBL476126 0.77 CES2 (0.43) ALDH1A1MAPTCES2CES1MTNR1A
SCHEMBL28088601 0.77 ALDH1A1 (0.37) ALDH1A1MAPTCES2CES1MTNR1A
SCHEMBL9496164 0.76 TP53 (0.36) ALDH1A1MAPTELANELMNAKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed