SCHEMBL703233

SCHEMBL703233

CCCc1cccc([SiH2]OC(C)=O)c1CCC

nearest known ligand 0.37

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
LTB4R Q15722 2/20 0.36
LTB4R2 Q9NPC1 1/20 0.36
PPARA Q07869 3/20 0.35
PPARG P37231 2/20 0.35
PRKCI P41743 1/20 0.33
DAO P14920 1/20 0.33
IAPP P10997 2/20 0.32
GABRA1 P14867 1/20 0.32
GABRB2 P47870 1/20 0.32
ALDH1A1 P00352 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705554 0.88 PPARA (0.42) LTB4RLTB4R2PPARAPPARGIAPP
SCHEMBL705144 0.83 GABRA1 (0.38) PPARAPPARGGABRA1GABRB2ALDH1A1
SCHEMBL704566 0.77 GABRA1 (0.38) GABRA1GABRB2ALDH1A1
SCHEMBL704395 0.77 PPARA (0.42) PPARAPPARG
SCHEMBL7181771 0.75 PPARA (0.36) LTB4RLTB4R2PPARAPPARGIAPP
SCHEMBL3482133 0.75 DAO (0.35) LTB4RLTB4R2DAOIAPPGABRA1
SCHEMBL703700 0.75 LTB4R (0.30) LTB4RLTB4R2
SCHEMBL704058 0.75 LTB4R (0.30) LTB4RLTB4R2
SCHEMBL7181789 0.72 THRB (0.48) PPARAPPARG
SCHEMBL704074 0.72 ALDH1A1 (0.32) LTB4RLTB4R2DAOGABRA1GABRB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed