SCHEMBL705144

SCHEMBL705144

CCc1cccc([SiH2]OC(C)=O)c1CC

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 3/20 0.38
GABRB2 P47870 3/20 0.38
NLRP3 Q96P20 1/20 0.35
TAAR1 Q96RJ0 2/20 0.33
ALOX15 P16050 1/20 0.33
TSHR P16473 1/20 0.33
CYP2C19 P33261 1/20 0.33
HIF1A Q16665 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
KDM4E B2RXH2 2/20 0.32
ALDH1A1 P00352 2/20 0.32
PPARG P37231 1/20 0.32
PPARA Q07869 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
CACNA1C Q13936 2/20 0.32
SCN5A Q14524 2/20 0.32
TP53 P04637 1/20 0.32
CYP3A4 P08684 1/20 0.32
LMNA P02545 1/20 0.32
HTR1A P08908 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704566 0.84 GABRA1 (0.38) GABRA1GABRB2NLRP3TSHRALDH1A1
SCHEMBL703233 0.83 LTB4R (0.36) GABRA1GABRB2ALDH1A1PPARGPPARA
SCHEMBL705554 0.80 PPARA (0.42) PPARGPPARA
SCHEMBL707296 0.75 GABRA1 (0.35) GABRA1GABRB2TAAR1SMN1; SMN2LMNA
SCHEMBL704111 0.75 GABRA1 (0.39) GABRA1GABRB2TAAR1HTR1A
SCHEMBL9745359 0.74 GABRA1 (0.46) GABRA1GABRB2TAAR1SCN5AHTR1A
SCHEMBL704395 0.74 PPARA (0.42) PPARGPPARACYP3A4
SCHEMBL3973276 0.74 GABRA1 (0.36) GABRA1GABRB2TSHRTDP1KDM4E
Acetic Acid SCHEMBL3669685 0.72 GABRA1 (0.52) GABRA1GABRB2TAAR1ALOX15TSHR
SCHEMBL15848618 0.71 ALDH1A1 (0.39) GABRA1GABRB2TSHRKDM4EALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed