SCHEMBL704566

SCHEMBL704566

CCc1ccccc1[SiH2]OC(C)=O

nearest known ligand 0.39

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 2/20 0.38
GABRB2 P47870 2/20 0.38
ALDH1A1 P00352 3/20 0.36
ELANE P08246 1/20 0.34
NLRP3 Q96P20 1/20 0.34
L3MBTL1 Q9Y468 2/20 0.33
MAPT P10636 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
TSHR P16473 1/20 0.33
CYP4F2 P78329 1/20 0.33
CYP4A11 Q02928 1/20 0.33
LMNA P02545 1/20 0.33
HTT P42858 1/20 0.33
CLCN2 P51788 1/20 0.33
PTGS2 P35354 1/20 0.33
MTNR1A P48039 1/20 0.33
MTNR1B P49286 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704395 0.85 PPARA (0.42) CYP4F2CYP4A11PTGS2
SCHEMBL705144 0.84 GABRA1 (0.38) GABRA1GABRB2ALDH1A1NLRP3TSHR
SCHEMBL15848618 0.82 ALDH1A1 (0.39) GABRA1GABRB2ALDH1A1ELANEMAPT
SCHEMBL703233 0.77 LTB4R (0.36) GABRA1GABRB2ALDH1A1
SCHEMBL707854 0.77 ALDH1A1 (0.38) ALDH1A1ELANEL3MBTL1MAPTTSHR
SCHEMBL28290082 0.76 GABRA1 (0.38) GABRA1GABRB2ALDH1A1L3MBTL1MAPT
SCHEMBL705554 0.75 PPARA (0.42) CYP4F2CYP4A11PTGS2
SCHEMBL3766605 0.75 MGLL (0.38) GABRA1GABRB2ALDH1A1L3MBTL1MAPT
SCHEMBL28291485 0.75 MAPT (0.40) GABRA1GABRB2NLRP3L3MBTL1MAPT
SCHEMBL713113 0.73 GABRA1 (0.39) GABRA1GABRB2NLRP3TSHRLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed