SCHEMBL703502

SCHEMBL703502

CC(C)(C)C(CO[SiH3])(c1ccccc1)C(C)(C)C

nearest known ligand 0.41

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.41
ALDH1A1 P00352 2/20 0.39
TAAR1 Q96RJ0 1/20 0.39
ALOX15 P16050 1/20 0.39
CYP2C19 P33261 1/20 0.35
HIF1A Q16665 1/20 0.35
KCNN4 O15554 3/20 0.33
ESR1 P03372 2/20 0.33
ESR2 Q92731 2/20 0.33
CYP3A4 P08684 1/20 0.33
TACR1 P25103 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
MAPT P10636 1/20 0.32
KMT2A Q03164 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707648 0.80 MAPK1 (0.39) MAPK1ALDH1A1TAAR1ALOX15CYP2C19
SCHEMBL1313612 0.79 MAPK1 (0.41) MAPK1ALDH1A1TAAR1ALOX15CYP2C19
SCHEMBL109031 0.78 TAAR1 (0.52) MAPK1ALDH1A1TAAR1ALOX15CYP2C19
SCHEMBL705543 0.78 MAPK1 (0.44) MAPK1ALDH1A1TAAR1ALOX15CYP2C19
SCHEMBL703821 0.77 MAPK1 (0.36) MAPK1ALDH1A1TAAR1ALOX15CYP2C19
SCHEMBL10324871 0.73 TAAR1 (0.44) MAPK1ALDH1A1TAAR1ALOX15CYP2C19
SCHEMBL238217 0.73 KIF11 (0.41) MAPK1ALDH1A1TAAR1ALOX15CYP2C19
SCHEMBL1225535 0.71 CES1 (0.40) MAPK1ALDH1A1TAAR1ALOX15CYP2C19
SCHEMBL705039 0.71 ESR1 (0.39) MAPK1ALDH1A1TAAR1ALOX15KCNN4
SCHEMBL704242 0.71 KCNN4 (0.38) MAPK1ALDH1A1TAAR1ALOX15CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed