SCHEMBL703696

SCHEMBL703696

CCCO[Si](c1ccccc1)(c1ccccc1)C(C)C

nearest known ligand 0.37

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.37
TSHR P16473 1/20 0.37
LMNA P02545 1/20 0.35
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
GAA P10253 2/20 0.33
MAPT P10636 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
TLR8 Q9NR97 1/20 0.33
HPGD P15428 2/20 0.33
LTA4H P09960 2/20 0.32
KDM4E B2RXH2 1/20 0.32
HTT P42858 1/20 0.32
GPR88 Q9GZN0 1/20 0.31
SIGMAR1 Q99720 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705583 0.89 LTA4H (0.42) ALDH1A1TSHRLMNAMEN1KMT2A
SCHEMBL703386 0.84 PRNP (0.33) ALDH1A1TSHRLMNAMEN1KMT2A
SCHEMBL1314349 0.83 L3MBTL1 (0.31)
SCHEMBL1313464 0.83 TLR8 (0.39) ALDH1A1MAPTNPSR1TLR8KDM4E
SCHEMBL702617 0.82 LMNA (0.36) ALDH1A1TSHRLMNAMEN1KMT2A
SCHEMBL708164 0.81 LMNA (0.35) ALDH1A1TSHRLMNAMEN1KMT2A
SCHEMBL1314908 0.77 TSHR (0.41) ALDH1A1TSHRLMNAGAAMAPT
SCHEMBL15915541 0.77 POLB (0.35) ALDH1A1TSHRLMNAMEN1KMT2A
SCHEMBL105659 0.75 LMNA (0.39) ALDH1A1LMNAMEN1KMT2AGAA
SCHEMBL703110 0.75 DUT (0.42) ALDH1A1TSHRLMNAMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed