SCHEMBL708164

SCHEMBL708164

CCCO[Si](OCCC)(c1ccccc1)C(C)C

nearest known ligand 0.35

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.35
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
ALDH1A1 P00352 3/20 0.34
TSHR P16473 1/20 0.34
HPGD P15428 1/20 0.33
LTA4H P09960 2/20 0.32
HTT P42858 1/20 0.32
GPR88 Q9GZN0 1/20 0.31
SIGMAR1 Q99720 1/20 0.31
GAA P10253 1/20 0.31
MAPT P10636 1/20 0.30
NPSR1 Q6W5P4 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703566 0.90
SCHEMBL703885 0.89 LTA4H (0.42) ALDH1A1TSHRLTA4H
SCHEMBL705429 0.84 L3MBTL1 (0.32) LMNALTA4HSIGMAR1
SCHEMBL702617 0.82 LMNA (0.36) LMNAMEN1KMT2AALDH1A1TSHR
SCHEMBL703696 0.81 ALDH1A1 (0.37) LMNAMEN1KMT2AALDH1A1TSHR
SCHEMBL707500 0.78 CYP3A4 (0.35) HPGDLTA4H
SCHEMBL19816429 0.76 TRPA1 (0.31) ALDH1A1TSHR
SCHEMBL703110 0.75 DUT (0.42) LMNAMEN1KMT2AALDH1A1TSHR
SCHEMBL105659 0.75 LMNA (0.39) LMNAMEN1KMT2AALDH1A1HPGD
SCHEMBL106121 0.75 LMNA (0.39) LMNAMEN1KMT2AALDH1A1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed