SCHEMBL704243

SCHEMBL704243

CCc1cccc(C(C)O[SiH3])c1CC

nearest known ligand 0.37

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 5/20 0.36
GABRB2 P47870 4/20 0.36
HTT P42858 1/20 0.35
ADRA2A P08913 2/20 0.34
ADRA2B P18089 2/20 0.34
ADRA2C P18825 2/20 0.34
GABRG2 P18507 1/20 0.33
GABRB3 P28472 1/20 0.33
TAAR1 Q96RJ0 2/20 0.33
HTR1A P08908 1/20 0.33
MAPT P10636 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
RRM1 P23921 1/20 0.30
RRM2B Q7LG56 1/20 0.30
KCNH2 Q12809 1/20 0.30
SCN5A Q14524 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705287 0.83 MAPT (0.39) GABRA1GABRB2HTTADRA2AADRA2B
SCHEMBL706646 0.81 GABRA1 (0.35) GABRA1GABRB2HTTTAAR1HTR1A
SCHEMBL707032 0.79 ADRA2A (0.39) GABRA1ADRA2AADRA2BADRA2CGABRG2
SCHEMBL9579249 0.79 GABRA1 (0.54) GABRA1GABRB2HTTGABRG2GABRB3
SCHEMBL9621022 0.79 GABRA1 (0.43) GABRA1GABRB2HTTADRA2AADRA2B
SCHEMBL706329 0.78 GABRA1 (0.33) GABRA1GABRB2HTTTAAR1HTR1A
SCHEMBL705823 0.77 ALOX5 (0.36) ADRA2AADRA2BADRA2C
SCHEMBL16959756 0.76 GABRA1 (0.40) GABRA1GABRB2HTTADRA2AADRA2B
SCHEMBL9579244 0.76 TSHR (0.48) GABRA1GABRB2HTTGABRG2GABRB3
SCHEMBL22558408 0.76 CYP1A2 (0.42) GABRA1GABRB2HTTGABRG2GABRB3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115181223-B Low-gloss matte auxiliary agent, preparation method thereof and molded body 铨盛聚碳科技股份有限公司 2023-08-29 CN claimed
CN-115181223-A Low-gloss matte auxiliary agent, preparation method thereof and formed body 铨盛聚碳科技股份有限公司 2022-10-14 CN claimed
CN-115181223-B Low-gloss matte auxiliary agent, preparation method thereof and molded body 铨盛聚碳科技股份有限公司 2023-08-29 CN disclosed
CN-115181223-A Low-gloss matte auxiliary agent, preparation method thereof and formed body 铨盛聚碳科技股份有限公司 2022-10-14 CN disclosed
CN-114085382-A Hydrogen-containing poly titanium boron siloxane flame retardant, and preparation method and application thereof 铨盛聚碳科技股份有限公司 2022-02-25 CN disclosed
CN-111448224-A Urea-bonded tetrafunctional (meth) acrylate compound and composition containing same 捷恩智株式会社 2020-07-24 CN disclosed
WO-2019194108-A1 UREA-BINDING TETRAFUNCTIONAL (METH)ACRYLATE COMPOUND AND COMPOSITION CONTAINING SAME JNC株式会社 2019-10-10 WO disclosed
US-9546237-B2 Stabilization of polymers that contain a hydrolyzable functionality BRIDGESTONE CORPORATION (JP) 2017-01-17 US disclosed
US-20130331520-A1 STABILIZATION OF POLYMERS THAT CONTAIN A HYDROLYZABLE FUNCTIONALITY BRIDGESTONE CORPORATION (JP) 2013-12-12 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed