SCHEMBL704372

SCHEMBL704372

c1ccc(OC(Oc2ccccc2)[SiH2]CCC[SiH2]C(Oc2ccccc2)Oc2ccccc2)cc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNA3 P22001 1/20 0.39
LTA4H P09960 2/20 0.35
TSHR P16473 1/20 0.35
SLC6A4 P31645 1/20 0.34
MTNR1A P48039 1/20 0.33
MTNR1B P49286 1/20 0.33
PPARG P37231 2/20 0.33
PPARA Q07869 2/20 0.33
HDAC3 O15379 1/20 0.32
HDAC4 P56524 1/20 0.32
HDAC1 Q13547 1/20 0.32
HDAC7 Q8WUI4 1/20 0.32
HDAC2 Q92769 1/20 0.32
HDAC10 Q969S8 1/20 0.32
HDAC11 Q96DB2 1/20 0.32
HDAC8 Q9BY41 1/20 0.32
HDAC6 Q9UBN7 1/20 0.32
HDAC9 Q9UKV0 1/20 0.32
HDAC5 Q9UQL6 1/20 0.32
DRD2 P14416 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705385 0.96 KCNA3 (0.39) KCNA3LTA4HTSHRSLC6A4MTNR1A
SCHEMBL705838 0.91 LTA4H (0.38) KCNA3LTA4HTSHRSLC6A4MTNR1A
SCHEMBL3815419 0.90 TAAR1 (0.41) KCNA3LTA4HTAAR1
SCHEMBL4363261 0.88 KCNA3 (0.34) KCNA3LTA4HTSHRSLC6A4MTNR1A
SCHEMBL4361027 0.88 KCNA3 (0.39) KCNA3LTA4HTSHRSLC6A4PPARG
SCHEMBL704602 0.82 LTA4H (0.38) KCNA3LTA4HTSHRSLC6A4MTNR1A
SCHEMBL4354696 0.78 LTA4H (0.35) KCNA3LTA4HTSHRSLC6A4MTNR1A
SCHEMBL4363429 0.78 KCNA3 (0.39) KCNA3LTA4HTSHRSLC6A4MTNR1A
SCHEMBL706554 0.71 KCNA3 (0.37) KCNA3LTA4HTSHRSLC6A4MTNR1A
SCHEMBL3359339 0.70 LTA4H (0.39) KCNA3LTA4HTSHRSLC6A4MTNR1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed