SCHEMBL705838

SCHEMBL705838

c1ccc(OC(Oc2ccccc2)[SiH2]CC[SiH2]C(Oc2ccccc2)Oc2ccccc2)cc1

nearest known ligand 0.38

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 1/20 0.38
TSHR P16473 1/20 0.38
KCNA3 P22001 1/20 0.37
SLC6A4 P31645 1/20 0.36
MTNR1A P48039 1/20 0.35
MTNR1B P49286 1/20 0.35
CA4 P22748 1/20 0.35
LMNA P02545 1/20 0.34
PPARG P37231 3/20 0.34
PPARA Q07869 3/20 0.34
SCN4A P35499 2/20 0.33
TAAR1 Q96RJ0 1/20 0.33
ALDH1A1 P00352 1/20 0.33
RECQL P46063 1/20 0.33
HIF1A Q16665 1/20 0.33
KDM4E B2RXH2 1/20 0.32
ALOX15 P16050 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704372 0.91 KCNA3 (0.39) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL705385 0.91 KCNA3 (0.39) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL704602 0.86 LTA4H (0.38) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL3815419 0.86 TAAR1 (0.41) LTA4HKCNA3TAAR1
SCHEMBL4363261 0.84 KCNA3 (0.34) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL4361027 0.84 KCNA3 (0.39) LTA4HTSHRKCNA3SLC6A4LMNA
SCHEMBL4354696 0.82 LTA4H (0.35) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL4363429 0.82 KCNA3 (0.39) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL3359339 0.73 LTA4H (0.39) LTA4HTSHRKCNA3SLC6A4MTNR1A
SCHEMBL705003 0.71 CA1 (0.40) LTA4HTSHRKCNA3SLC6A4MTNR1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed