SCHEMBL704701

SCHEMBL704701

CC(=O)O[SiH2]c1cccc(C(C)(C)C)c1C(C)(C)C

nearest known ligand 0.37

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CA2 P00918 1/20 0.37
GABRA1 P14867 1/20 0.33
GABRB2 P47870 1/20 0.33
ALDH1A1 P00352 3/20 0.32
TDP1 Q9NUW8 2/20 0.32
TSHR P16473 1/20 0.32
ATM Q13315 1/20 0.32
CYP3A4 P08684 1/20 0.31
NLRP3 Q96P20 1/20 0.30
KDM4E B2RXH2 2/20 0.30
GAA P10253 1/20 0.30
RXRA P19793 1/20 0.30
RXRB P28702 1/20 0.30
RXRG P48443 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705808 0.85 ALDH1A1 (0.39) CA2GABRA1GABRB2ALDH1A1TDP1
SCHEMBL27923916 0.78 CA2 (0.39) CA2GABRA1GABRB2ALDH1A1TDP1
SCHEMBL714784 0.73 CA2 (0.35) CA2GABRA1GABRB2ALDH1A1TDP1
SCHEMBL5838714 0.70 TDP1 (0.43) CA2ALDH1A1TDP1TSHRATM
SCHEMBL17138311 0.70 CA2 (0.41) CA2GABRA1GABRB2ALDH1A1TDP1
SCHEMBL27173778 0.70 CA2 (0.41) CA2GABRA1GABRB2ALDH1A1TDP1
SCHEMBL17138319 0.70 CA2 (0.41) CA2GABRA1GABRB2ALDH1A1TDP1
SCHEMBL707653 0.69 PTPN1 (0.41) ALDH1A1TDP1TSHRATMCYP3A4
SCHEMBL29754748 0.69 TDP1 (0.39) CA2GABRA1GABRB2ALDH1A1TDP1
SCHEMBL1434698 0.68 CA2 (0.45) CA2GABRA1GABRB2ALDH1A1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed