SCHEMBL705003

SCHEMBL705003

c1ccc(OC(Oc2ccccc2)[SiH2]c2ccc([SiH2]C(Oc3ccccc3)Oc3ccccc3)cc2)cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.40
CA2 P00918 1/20 0.40
LTA4H P09960 1/20 0.38
TSHR P16473 1/20 0.38
CA4 P22748 2/20 0.35
CA5A P35218 2/20 0.35
CA5B Q9Y2D0 2/20 0.35
CA6 P23280 1/20 0.35
CA7 P43166 1/20 0.35
ENPP2 Q13822 1/20 0.35
CA14 Q9ULX7 1/20 0.35
KDM4E B2RXH2 1/20 0.32
SLC6A4 P31645 1/20 0.32
KCNA3 P22001 1/20 0.32
MTNR1A P48039 1/20 0.32
MTNR1B P49286 1/20 0.32
CHRNB4 P30926 2/20 0.31
CHRNA3 P32297 2/20 0.31
PPARG P37231 2/20 0.31
PPARA Q07869 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3359339 0.73 LTA4H (0.39) CA1CA2LTA4HTSHRCA4
SCHEMBL705838 0.71 LTA4H (0.38) LTA4HTSHRCA4KDM4ESLC6A4
SCHEMBL704602 0.71 LTA4H (0.38) LTA4HTSHRCA4KDM4ESLC6A4
SCHEMBL210198 0.68 CA4 (0.36) CA1CA2LTA4HTSHRCA4
SCHEMBL704372 0.68 KCNA3 (0.39) LTA4HTSHRCA4SLC6A4KCNA3
SCHEMBL4354696 0.68 LTA4H (0.35) LTA4HTSHRCA4SLC6A4KCNA3
SCHEMBL4363429 0.68 KCNA3 (0.39) LTA4HTSHRSLC6A4KCNA3MTNR1A
SCHEMBL705385 0.68 KCNA3 (0.39) LTA4HTSHRCA4SLC6A4KCNA3
SCHEMBL3346429 0.68 LTA4H (0.50) LTA4HTSHRCA4CA5ACA5B
SCHEMBL8674817 0.67 LTA4H (0.43) LTA4HTSHRCA4CA5ACA5B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed