SCHEMBL705070

SCHEMBL705070

CC(C)[SiH2]Oc1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.42
LMNA P02545 1/20 0.40
LTA4H P09960 3/20 0.39
TSHR P16473 1/20 0.39
PTGS1 P23219 2/20 0.36
MAOA P21397 1/20 0.36
POLB P06746 1/20 0.34
KDM4E B2RXH2 1/20 0.33
KCNA3 P22001 1/20 0.33
MTNR1A P48039 4/20 0.32
MTNR1B P49286 4/20 0.32
ADRB2 P07550 1/20 0.32
ADRB1 P08588 1/20 0.32
CYP2D6 P10635 1/20 0.32
ADRB3 P13945 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10570045 0.75 LTA4H (0.42) CA4LMNALTA4HTSHRPTGS1
SCHEMBL703093 0.73 SCN4A (0.38) CA4LTA4HTSHRKDM4EKCNA3
SCHEMBL28437909 0.72 DRD2 (0.39) LMNAPTGS1MAOA
SCHEMBL10568357 0.71 LMNA (0.42) CA4LMNALTA4HTSHRPTGS1
SCHEMBL706293 0.70
SCHEMBL28648305 0.70 LMNA (0.33) CA4LMNALTA4HTSHRPTGS1
SCHEMBL28658222 0.70 KCNA3 (0.50) LMNALTA4HPTGS1MAOAKCNA3
SCHEMBL22042302 0.70 TSHR (0.35) CA4LTA4HTSHRKCNA3
SCHEMBL707758 0.69 LTA4H (0.50) CA4LMNALTA4HTSHRMAOA
SCHEMBL28648302 0.69 LMNA (0.40) CA4LMNAPTGS1MAOAPOLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109641482-B Preparation of cis-1, 4-polydienes having multiple silane functional groups prepared by in situ hydrosilylation of polymer glues 株式会社普利司通 2021-11-05 CN disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed