SCHEMBL705073

SCHEMBL705073

CCCCCCC(CCC)O[SiH2]CC[SiH2]OC(CCC)CCCCCC

nearest known ligand 0.37

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.37
DNM1 Q05193 2/20 0.36
TSHR P16473 1/20 0.35
THRB P10828 1/20 0.35
OPRM1 P35372 1/20 0.34
SMPD1 P17405 3/20 0.34
GPR84 Q9NQS5 3/20 0.33
FDPS P14324 3/20 0.33
ZDHHC7 Q9NXF8 1/20 0.33
SPHK1 Q9NYA1 1/20 0.33
FFAR1 O14842 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704464 0.98 OPRM1 (0.36) LMNADNM1TSHRTHRBOPRM1
SCHEMBL704530 0.96 DNM1 (0.41) LMNADNM1TSHRTHRBOPRM1
SCHEMBL706863 0.96 DNM1 (0.41) LMNADNM1TSHRTHRBOPRM1
SCHEMBL703889 0.94 LMNA (0.35) LMNADNM1TSHRTHRBOPRM1
SCHEMBL5574590 0.94 LMNA (0.35) LMNADNM1TSHRTHRBOPRM1
SCHEMBL5575126 0.94 LMNA (0.35) LMNADNM1TSHRTHRBOPRM1
SCHEMBL702102 0.94 LMNA (0.35) LMNADNM1TSHRTHRBOPRM1
SCHEMBL702775 0.93 DNM1 (0.37) LMNADNM1TSHRTHRBOPRM1
SCHEMBL713161 0.91 OPRM1 (0.34) LMNADNM1OPRM1SMPD1FDPS
SCHEMBL5575130 0.91 OPRM1 (0.34) LMNADNM1OPRM1SMPD1FDPS

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed