SCHEMBL706863

SCHEMBL706863

CCCCCCCC(CCCC)O[SiH2]CC[SiH2]OC(CCCC)CCCCCCC

nearest known ligand 0.41

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 2/20 0.41
LMNA P02545 1/20 0.37
CA2 P00918 1/20 0.35
TSHR P16473 1/20 0.35
THRB P10828 1/20 0.35
OPRM1 P35372 1/20 0.34
SMPD1 P17405 3/20 0.34
FDPS P14324 3/20 0.33
GPR84 Q9NQS5 2/20 0.33
ZDHHC7 Q9NXF8 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704530 1.00 DNM1 (0.41) DNM1LMNACA2TSHRTHRB
SCHEMBL702775 0.98 DNM1 (0.37) DNM1LMNACA2TSHRTHRB
SCHEMBL705073 0.96 LMNA (0.37) DNM1LMNATSHRTHRBOPRM1
SCHEMBL708162 0.94 DNM1 (0.39) DNM1LMNACA2TSHRTHRB
SCHEMBL704163 0.94 DNM1 (0.39) DNM1LMNACA2TSHRTHRB
SCHEMBL702434 0.94 DNM1 (0.39) DNM1LMNACA2TSHRTHRB
SCHEMBL704550 0.94 DNM1 (0.39) DNM1LMNACA2TSHRTHRB
SCHEMBL704464 0.93 OPRM1 (0.36) DNM1LMNATSHRTHRBOPRM1
SCHEMBL703498 0.93 DNM1 (0.35) DNM1CA2TSHRFDPS
SCHEMBL706751 0.91 DNM1 (0.36) DNM1LMNACA2OPRM1SMPD1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed