SCHEMBL704464

SCHEMBL704464

CCCCCC(CCC)O[SiH2]CC[SiH2]OC(CCC)CCCCC

nearest known ligand 0.36

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
OPRM1 P35372 1/20 0.36
LMNA P02545 1/20 0.33
DNM1 Q05193 2/20 0.32
SMPD1 P17405 3/20 0.31
FDPS P14324 4/20 0.31
ZDHHC7 Q9NXF8 1/20 0.31
TSHR P16473 1/20 0.30
THRB P10828 1/20 0.30
GPR84 Q9NQS5 2/20 0.30
SPHK1 Q9NYA1 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705073 0.98 LMNA (0.37) OPRM1LMNADNM1SMPD1FDPS
SCHEMBL702775 0.95 DNM1 (0.37) OPRM1LMNADNM1SMPD1FDPS
SCHEMBL704530 0.93 DNM1 (0.41) OPRM1LMNADNM1SMPD1FDPS
SCHEMBL706863 0.93 DNM1 (0.41) OPRM1LMNADNM1SMPD1FDPS
SCHEMBL5575130 0.93 OPRM1 (0.34) OPRM1LMNADNM1SMPD1FDPS
SCHEMBL705853 0.93 OPRM1 (0.34) OPRM1LMNADNM1SMPD1FDPS
SCHEMBL713161 0.93 OPRM1 (0.34) OPRM1LMNADNM1SMPD1FDPS
SCHEMBL702589 0.93 DNM1 (0.33) DNM1
SCHEMBL703889 0.91 LMNA (0.35) OPRM1LMNADNM1SMPD1FDPS
SCHEMBL5575126 0.91 LMNA (0.35) OPRM1LMNADNM1SMPD1FDPS

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed