SCHEMBL705080

SCHEMBL705080

CCCCC(c1ccccc1)C(C)(C)O[SiH3]

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CTSK P43235 10/20 0.40
POLB P06746 1/20 0.38
KDM4E B2RXH2 1/20 0.37
ALDH1A1 P00352 1/20 0.37
CTSL P07711 2/20 0.36
CTSS P25774 2/20 0.36
CTSB P07858 1/20 0.36
CTSH P09668 1/20 0.36
PRSS1 P07477 1/20 0.36
CTSG P08311 1/20 0.36
CTRB1 P17538 1/20 0.36
CMA1 P23946 1/20 0.36
RIPK1 Q13546 2/20 0.36
LTA4H P09960 1/20 0.36
HTR2A P28223 1/20 0.36
HRH1 P35367 1/20 0.36
AOC3 Q16853 1/20 0.36
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
ATM Q13315 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706206 0.82 LMNA (0.41) POLBRIPK1HRH1AOC3MEN1
SCHEMBL8536103 0.77 POLB (0.41) CTSKPOLBKDM4EALDH1A1PRSS1
SCHEMBL8536105 0.77 POLB (0.41) CTSKPOLBKDM4EALDH1A1PRSS1
Hydrochloric Acid SCHEMBL11127650 0.76 POLB (0.40) CTSKPOLBKDM4EALDH1A1RIPK1
Water SCHEMBL11427319 0.76 POLB (0.40) CTSKPOLBKDM4EALDH1A1RIPK1
SCHEMBL8322227 0.75 POLB (0.39) CTSKPOLBKDM4EALDH1A1RIPK1
SCHEMBL9226552 0.74 MEN1 (0.40) POLBALDH1A1RIPK1HTR2AMEN1
SCHEMBL28091153 0.74 CTSK (0.46) CTSKPOLBCTSLCTSSCTSB
SCHEMBL7760569 0.74 POLB (0.41) CTSKPOLBKDM4EALDH1A1CTSL
SCHEMBL28357908 0.73 POLB (0.41) CTSKPOLBKDM4EALDH1A1PRSS1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed