SCHEMBL706206

SCHEMBL706206

CCC(c1ccccc1)C(C)(C)O[SiH3]

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.41
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38
RIPK1 Q13546 2/20 0.36
SLC6A3 Q01959 2/20 0.34
MIF P14174 1/20 0.34
CACNA1F O60840 1/20 0.34
CHRM2 P08172 1/20 0.34
CHRM1 P11229 1/20 0.34
ADRA2B P18089 1/20 0.34
CHRM3 P20309 1/20 0.34
ADRA1A P35348 1/20 0.34
HRH1 P35367 1/20 0.34
OPRK1 P41145 1/20 0.34
CACNA1D Q01668 1/20 0.34
KCNH2 Q12809 1/20 0.34
CACNA1S Q13698 1/20 0.34
CACNA1C Q13936 1/20 0.34
SCN5A Q14524 1/20 0.34
CYP1A2 P05177 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705080 0.82 CTSK (0.40) MEN1KMT2ARIPK1HRH1AOC3
SCHEMBL705750 0.78 LMNA (0.38) LMNAMEN1KMT2AMIFCYP1A2
SCHEMBL29010468 0.77 LMNA (0.48) LMNARIPK1SLC6A3MIFCACNA1F
SCHEMBL53374 0.75 TAAR1 (0.37) KMT2ARIPK1SLC6A3CACNA1FCHRM2
SCHEMBL12504412 0.75 HSD17B10 (0.42) LMNAMEN1KMT2ARIPK1CHRM2
SCHEMBL705584 0.74 LMNA (0.35) LMNAMEN1KMT2ARIPK1TRPA1
SCHEMBL27766264 0.74 CYP1A2 (0.44) LMNAMEN1KMT2ARIPK1CYP1A2
SCHEMBL7564248 0.74 LMNA (0.45) LMNARIPK1SLC6A3MIFCACNA1F
SCHEMBL6270809 0.74 LMNA (0.45) LMNAMEN1KMT2ARIPK1SLC6A3
SCHEMBL704259 0.74 SLC6A4 (0.41) LMNARIPK1SLC6A3CACNA1FCHRM2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed