SCHEMBL706208

SCHEMBL706208

CCc1ccccc1[SiH2]OC(C)(C)C

nearest known ligand 0.39

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 3/20 0.39
GABRB2 P47870 3/20 0.39
MAPT P10636 2/20 0.34
L3MBTL1 Q9Y468 2/20 0.34
NPSR1 Q6W5P4 1/20 0.34
MGLL Q99685 1/20 0.32
CTSB P07858 1/20 0.32
RIPK1 Q13546 2/20 0.31
MEN1 O00255 1/20 0.31
ALDH1A1 P00352 1/20 0.31
GAA P10253 1/20 0.31
PKM P14618 1/20 0.31
TSHR P16473 1/20 0.31
KMT2A Q03164 1/20 0.31
HCAR1 Q9BXC0 1/20 0.30
HPGD P15428 1/20 0.30
ATM Q13315 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704111 0.84 GABRA1 (0.39) GABRA1GABRB2
SCHEMBL705082 0.82 LIPG (0.38)
SCHEMBL2961141 0.81 MAPK1 (0.33) ALDH1A1TSHR
SCHEMBL28290082 0.78 GABRA1 (0.38) GABRA1GABRB2MAPTL3MBTL1NPSR1
SCHEMBL3766605 0.76 MGLL (0.38) GABRA1GABRB2MAPTL3MBTL1NPSR1
SCHEMBL28291485 0.76 MAPT (0.40) GABRA1GABRB2MAPTL3MBTL1NPSR1
SCHEMBL704058 0.74 LTB4R (0.30)
SCHEMBL28846849 0.74 GABRA1 (0.43) GABRA1GABRB2MAPTL3MBTL1NPSR1
SCHEMBL704261 0.74 ACHE (0.38) ALDH1A1TSHR
SCHEMBL707826 0.73 MGLL (0.36) GABRA1GABRB2MAPTL3MBTL1NPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed