SCHEMBL705459

SCHEMBL705459

CCCO[Si](C)(C)c1ccc([Si](C)(C)OCCC)cc1

nearest known ligand 0.32

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
CYP19A1 P11511 2/20 0.32
CYP2C9 P11712 2/20 0.32
CYP2C19 P33261 2/20 0.32
CYP1A2 P05177 1/20 0.32
CYP2D6 P10635 1/20 0.32
ALDH1A1 P00352 2/20 0.30
KDM4E B2RXH2 1/20 0.30
NPC1 O15118 1/20 0.30
HPGD P15428 1/20 0.30
RAB9A P51151 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
HSD17B10 Q99714 1/20 0.30
ESR1 P03372 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481700 0.91 ACHE (0.33) CYP19A1CYP2C9CYP2C19ALDH1A1
SCHEMBL3482299 0.89 TP53 (0.34) ALDH1A1KDM4ENPC1HPGDRAB9A
SCHEMBL8954017 0.89 MAPT (0.38) CYP2C9CYP2C19CYP1A2CYP2D6ALDH1A1
SCHEMBL704364 0.89 LMNA (0.38) CYP19A1CYP2C9CYP2C19CYP1A2ALDH1A1
SCHEMBL3481583 0.88 CA1 (0.42) ALDH1A1KDM4ENPC1RAB9ASMN1; SMN2
SCHEMBL705222 0.86 CYP2C9 (0.41) CYP19A1CYP2C9CYP2C19CYP1A2CYP2D6
SCHEMBL23493486 0.84 ALDH1A1 (0.39) ALDH1A1
SCHEMBL23493390 0.83 ALDH1A1 (0.32) ALDH1A1ESR1
SCHEMBL705703 0.80 ESR1 (0.31) CYP19A1CYP2C9CYP2C19ALDH1A1KDM4E
SCHEMBL704583 0.79 NQO1 (0.33) ESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-3965134-A Process for making silarylenesilanediol GENERAL ELECTRIC COMPANY (US) 1976-06-22 US claimed
US-3959403-A Process for making silarylenesilanediol, silarylenesiloxanediol and silarylenesiloxane-polydiorganosiloxane block copolymers GENERAL ELECTRIC COMPANY (US) 1976-05-25 US claimed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-4116993-A REACTION OF CHLORO AROMATIC COMPOUND WITH SILICON COMPOUND, MAGNESIUM, TETRAHYDROFURAN PROMOTER GENERAL ELECTRIC COMPANY (US) 1978-09-26 US disclosed
US-3965134-A Process for making silarylenesilanediol GENERAL ELECTRIC COMPANY (US) 1976-06-22 US disclosed
US-3959403-A Process for making silarylenesilanediol, silarylenesiloxanediol and silarylenesiloxane-polydiorganosiloxane block copolymers GENERAL ELECTRIC COMPANY (US) 1976-05-25 US disclosed