SCHEMBL706190

SCHEMBL706190

CCCCO[Si](C)(C)c1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.46
CYP2C9 P11712 6/20 0.41
CYP2C19 P33261 6/20 0.41
CYP1A2 P05177 5/20 0.41
CYP19A1 P11511 5/20 0.41
TSHR P16473 2/20 0.39
TDP1 Q9NUW8 1/20 0.39
L3MBTL1 Q9Y468 1/20 0.39
ABCB1 P08183 1/20 0.39
CYP2D6 P10635 2/20 0.39
FAAH O00519 1/20 0.36
MGLL Q99685 1/20 0.36
TLR8 Q9NR97 1/20 0.36
ALDH1A1 P00352 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9805244 0.92 LTA4H (0.44) LTA4HCYP2C9CYP2C19TSHRTDP1
SCHEMBL18417879 0.92 LTA4H (0.44) LTA4HCYP2C9CYP2C19TSHRTDP1
SCHEMBL2598243 0.92 LTA4H (0.44) LTA4HCYP2C9CYP2C19TSHRTDP1
SCHEMBL705222 0.90 CYP2C9 (0.41) LTA4HCYP2C9CYP2C19CYP1A2CYP19A1
SCHEMBL704364 0.88 LMNA (0.38) LTA4HCYP2C9CYP2C19CYP1A2CYP19A1
SCHEMBL708763 0.84 LTA4H (0.46) LTA4HCYP2C9CYP2C19CYP1A2CYP19A1
SCHEMBL706997 0.84 LTA4H (0.46) LTA4HCYP2C9CYP2C19CYP1A2CYP19A1
SCHEMBL11809789 0.82 ALDH1A1 (0.36) LTA4HTSHRTDP1ALDH1A1
SCHEMBL431649 0.82 LTA4H (0.47) LTA4HCYP2C9CYP2C19CYP1A2CYP19A1
SCHEMBL431558 0.82 LTA4H (0.47) LTA4HCYP2C9CYP2C19CYP1A2CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-7604866-B2 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2009-10-20 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-20060269724-A1 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2006-11-30 US disclosed
US-20040077757-A1 Coating composition for use in producing an insulating thin film ASAHI KASEI KABUSHIKI KAISHA (JP) 2004-04-22 US disclosed