SCHEMBL705275

SCHEMBL705275

Cc1cccc([SiH2]OC(C)(C)C)c1C

nearest known ligand 0.40

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
TRPA1 O75762 1/20 0.40
ATM Q13315 1/20 0.40
MAPT P10636 1/20 0.32
GABRA1 P14867 1/20 0.31
GABRB2 P47870 1/20 0.31
CCR4 P51679 1/20 0.31
CYP1A2 P05177 1/20 0.31
CYP2A6 P11509 1/20 0.31
TSHR P16473 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30
CA7 P43166 1/20 0.30
CA9 Q16790 1/20 0.30
HTR1B P28222 1/20 0.30
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704261 0.83 ACHE (0.38) TSHRCA1CA2CA7CA9
SCHEMBL447683 0.79 TRPA1 (0.41) TRPA1ATMMAPTCYP1A2CYP2A6
SCHEMBL5409861 0.79 TRPA1 (0.41) TRPA1ATMMAPTCCR4CYP1A2
SCHEMBL2961141 0.78 MAPK1 (0.33) TSHRALDH1A1
SCHEMBL18315768 0.77 TRPA1 (0.39) TRPA1ATMMAPTGABRA1GABRB2
SCHEMBL5080895 0.76 TRPA1 (0.36) TRPA1ATMMAPTHTR1B
SCHEMBL1894227 0.75 TRPA1 (0.38) TRPA1ATMMAPTCYP1A2CYP2A6
SCHEMBL17865480 0.73 TRPA1 (0.37) TRPA1ATMMAPTCYP1A2CYP2A6
SCHEMBL4435873 0.72 TRPA1 (0.40) TRPA1ATMMAPTCYP1A2CYP2A6
SCHEMBL3841318 0.72 TRPA1 (0.35) TRPA1ATMMAPTCYP1A2CYP2A6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed