SCHEMBL705404

SCHEMBL705404

CC(C)CC(O[SiH3])c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 4/20 0.39
TRPA1 O75762 4/20 0.38
ALDH1A1 P00352 2/20 0.38
LMNA P02545 1/20 0.38
SLC6A4 P31645 1/20 0.37
CACNA1F O60840 1/20 0.36
CHRM2 P08172 1/20 0.36
CHRM1 P11229 1/20 0.36
ADRA2B P18089 1/20 0.36
CHRM3 P20309 1/20 0.36
ADRA1A P35348 1/20 0.36
HRH1 P35367 1/20 0.36
OPRK1 P41145 1/20 0.36
CACNA1D Q01668 1/20 0.36
SLC6A3 Q01959 1/20 0.36
KCNH2 Q12809 1/20 0.36
CACNA1S Q13698 1/20 0.36
CACNA1C Q13936 1/20 0.36
SCN5A Q14524 1/20 0.36
NPSR1 Q6W5P4 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7450493 0.83 TAAR1 (0.41) TAAR1TRPA1ALDH1A1LMNASLC6A4
SCHEMBL715339 0.82 POLB (0.41) TAAR1LMNASLC6A4CHRM2CHRM1
SCHEMBL8193605 0.81 TAAR1 (0.40) TAAR1TRPA1ALDH1A1LMNASLC6A4
SCHEMBL12525111 0.79 TAAR1 (0.39) TAAR1TRPA1ALDH1A1LMNASLC6A4
SCHEMBL707195 0.79 SLC7A5 (0.39) TAAR1ALDH1A1SLC6A4CHRM2CHRM1
SCHEMBL703561 0.78 LMNA (0.46) TAAR1TRPA1LMNASLC6A4HRH1
SCHEMBL705168 0.75 AOC3 (0.42) LMNASLC6A4CHRM1ADRA2BHRH1
SCHEMBL29241745 0.75 ALDH1A1 (0.38) TAAR1TRPA1ALDH1A1LMNASLC6A4
SCHEMBL5666714 0.73 HTR2A (0.57) ALDH1A1LMNASLC6A4CHRM2CHRM1
SCHEMBL713133 0.73 RIPK1 (0.41) TAAR1LMNASLC6A4CACNA1FCHRM2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed