SCHEMBL705703

SCHEMBL705703

CCCO[Si](C)(OCCC)c1ccc([Si](C)(OCCC)OCCC)cc1

nearest known ligand 0.31

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 2/20 0.31
ESR2 Q92731 1/20 0.31
ALDH1A1 P00352 2/20 0.30
KDM4E B2RXH2 1/20 0.30
NPC1 O15118 1/20 0.30
HPGD P15428 1/20 0.30
RAB9A P51151 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
HSD17B10 Q99714 1/20 0.30
CYP19A1 P11511 1/20 0.30
CYP2C9 P11712 1/20 0.30
CYP2C19 P33261 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482147 0.91 ACHE (0.33) ESR1ESR2ALDH1A1CYP19A1CYP2C9
SCHEMBL28062851 0.89 MAPT (0.33) ALDH1A1KDM4ENPC1HPGDRAB9A
SCHEMBL9804106 0.89 MAPT (0.38) ALDH1A1KDM4ENPC1RAB9ACYP2C9
SCHEMBL19809191 0.89 ESR1 (0.47) ESR1ESR2ALDH1A1KDM4ESMN1; SMN2
SCHEMBL3481566 0.89 TP53 (0.34) ALDH1A1KDM4ENPC1HPGDRAB9A
SCHEMBL28062839 0.89 ALDH1A1 (0.34) ALDH1A1KDM4ENPC1HPGDRAB9A
SCHEMBL426599 0.89 LMNA (0.38) ESR1ESR2ALDH1A1HPGDSMN1; SMN2
SCHEMBL704788 0.86 CYP2C9 (0.39) ALDH1A1KDM4ENPC1RAB9AHSD17B10
SCHEMBL3294085 0.83 LMNA (0.35) ESR1ESR2ALDH1A1KDM4ENPC1
SCHEMBL1003180 0.83 LMNA (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed