SCHEMBL706074

SCHEMBL706074

CCCO[SiH](OCCC)C(C)c1ccccc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 4/20 0.38
LMNA P02545 3/20 0.38
MEN1 O00255 2/20 0.36
KMT2A Q03164 2/20 0.36
HTT P42858 2/20 0.36
OPRM1 P35372 2/20 0.36
OPRK1 P41145 2/20 0.36
OPRD1 P41143 1/20 0.36
OPRL1 P41146 1/20 0.36
SCN1A P35498 2/20 0.35
SCN2A Q99250 2/20 0.35
SCN3A Q9NY46 2/20 0.35
CYP1A2 P05177 1/20 0.35
CHRM2 P08172 1/20 0.35
CHRM4 P08173 1/20 0.35
CHRM5 P08912 1/20 0.35
ADRA2A P08913 1/20 0.35
CYP2D6 P10635 1/20 0.35
CHRM1 P11229 1/20 0.35
TSHR P16473 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706389 0.89 LTA4H (0.43) LMNACYP1A2TSHRALDH1A1GPR88
SCHEMBL28688705 0.87 LTA4H (0.43) LMNATSHRHTR2AGPR88
SCHEMBL115878 0.83 TAAR1 (0.40) TAAR1LMNAMEN1KMT2AHTR2A
SCHEMBL19809427 0.82 LMNA (0.45) LMNACYP1A2CHRM2ADRA2ACYP2D6
SCHEMBL17937688 0.81 ADRB2 (0.41) LMNAMEN1KMT2ATSHRSLC6A2
SCHEMBL17937755 0.81 MEN1 (0.36) LMNAMEN1KMT2AOPRM1CYP1A2
SCHEMBL63381 0.81 DPP4 (0.37) TAAR1LMNACYP1A2ADRA2ACYP2D6
SCHEMBL702246 0.81 LMNA (0.39) TAAR1LMNAMEN1KMT2AHTT
SCHEMBL28200037 0.81 LMNA (0.44) LMNACYP1A2CHRM2ADRA2ACYP2D6
SCHEMBL706757 0.79 AOC3 (0.38) LMNAMEN1KMT2AHTTOPRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108250754-B Silicon-containing resin composition, silicon-containing resin film, silica film, light-emitting display element panel, and light-emitting display device 东京应化工业株式会社 2022-01-25 CN disclosed
CN-107075255-B Encapsulating material composition for LED 日产化学工业株式会社 2020-05-22 CN disclosed
CN-106062044-B Polysiloxane copolymer, and antistatic agent and resin composition containing same 信越化学工业株式会社 2019-11-26 CN disclosed
CN-105916913-B Polysiloxane copolymer and antistatic agent containing it 广荣化学工业株式会社 2019-10-25 CN disclosed
US-10066059-B2 Sealing material composition for LED NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-09-04 US disclosed
CN-108250754-A Containing silicone resin composition, containing silicone resin film, silica membrane, illuminated display element panel and luminous display unit 东京应化工业株式会社 2018-07-06 CN disclosed
US-20170306095-A1 SEALING MATERIAL COMPOSITION FOR LED NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-10-26 US disclosed
CN-106062044-A Polysiloxane copolymer, and antistatic agent and resin composition containing same 信越化学工业株式会社 2016-10-26 CN disclosed
CN-105916913-A Polysiloxane copolymer and antistatic agent comprising same 广荣化学工业株式会社 2016-08-31 CN disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed
EP-1085022-A1 A method of manufacturing an acyloxysilane compound having functional groups bonded to silicon atoms via Si-C- bonds Dow Corning Asia, Ltd. (JP) 2001-03-21 EP disclosed
US-6060620-A Method for manufacturing an acyloxysilane compound having functional groups bonded to silicon atoms via SI--C bonds DOW CORNING ASIA, LTD. (JP) 2000-05-09 US disclosed
US-6048994-A Selective hydrosilylation method using hydrido (hydrocarbonoxy) silane DOW CORNING ASIA, LTD. (JP) 2000-04-11 US disclosed