SCHEMBL702730

SCHEMBL702730

CCCC(O[SiH3])c1ccccc1CC

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TAS1R3 Q7RTX0 1/20 0.36
TAS1R1 Q7RTX1 1/20 0.36
MAPT P10636 1/20 0.36
NPSR1 Q6W5P4 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
CYP3A4 P08684 1/20 0.34
CYP2D6 P10635 1/20 0.34
SLC6A2 P23975 1/20 0.34
SLC6A4 P31645 1/20 0.34
SLC6A3 Q01959 1/20 0.34
KCNH2 Q12809 1/20 0.34
CYSLTR2 Q9NS75 2/20 0.33
CYSLTR1 Q9Y271 2/20 0.33
TSHR P16473 1/20 0.33
GABRA1 P14867 2/20 0.32
GABRB2 P47870 2/20 0.32
ADRA2A P08913 1/20 0.32
ADRA2B P18089 1/20 0.32
ADRA2C P18825 1/20 0.32
OPRM1 P35372 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21175585 0.85 TAS1R3 (0.38) TAS1R3TAS1R1MAPTNPSR1L3MBTL1
SCHEMBL707358 0.85 MAPT (0.38) MAPTNPSR1L3MBTL1CYP3A4CYP2D6
SCHEMBL706089 0.85 CYSLTR2 (0.43) CYP3A4CYP2D6CYSLTR2CYSLTR1ADRA2A
SCHEMBL706329 0.85 GABRA1 (0.33) TAS1R3TAS1R1MAPTNPSR1L3MBTL1
SCHEMBL707196 0.80 GABRA1 (0.36) CYP3A4SLC6A2TSHRGABRA1GABRB2
SCHEMBL703010 0.80 ESR1 (0.44) NPSR1CYP3A4CYP2D6SLC6A2SLC6A4
SCHEMBL706397 0.77 ADRA2A (0.35) ADRA2AADRA2BADRA2C
SCHEMBL707595 0.76 TSHR (0.33) MAPTCYP3A4CYP2D6SLC6A4TSHR
SCHEMBL705287 0.76 MAPT (0.39) MAPTNPSR1L3MBTL1CYP3A4CYP2D6
SCHEMBL3481497 0.75 ADRA2A (0.40) CYSLTR2CYSLTR1TSHRADRA2AADRA2B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed