SCHEMBL707196

SCHEMBL707196

CCCC(O[SiH3])c1ccccc1C(C)C

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 3/20 0.36
GABRB2 P47870 2/20 0.36
GBA1 P04062 1/20 0.35
NOS3 P29474 2/20 0.35
NOS1 P29475 2/20 0.35
NOS2 P35228 2/20 0.35
GABRG2 P18507 2/20 0.34
GABRB3 P28472 2/20 0.34
TSHR P16473 2/20 0.33
FAAH O00519 1/20 0.33
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
LMNA P02545 1/20 0.33
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
HPGD P15428 1/20 0.33
GABRB1 P18505 1/20 0.33
PTGS1 P23219 1/20 0.33
SLC6A2 P23975 1/20 0.33
HTR2C P28335 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL715340 0.85 TSHR (0.39) GABRA1GABRB2GBA1NOS3NOS1
SCHEMBL706263 0.84 GABRA1 (0.35) GABRA1GABRB2GABRG2GABRB3TSHR
SCHEMBL703010 0.81 ESR1 (0.44) TSHRLMNACYP1A2CYP3A4SLC6A2
SCHEMBL702730 0.80 TAS1R3 (0.36) GABRA1GABRB2TSHRCYP3A4SLC6A2
SCHEMBL706089 0.80 CYSLTR2 (0.43) CYP3A4ALOX5
SCHEMBL3482259 0.79 TSHR (0.39) TSHR
SCHEMBL707595 0.77 TSHR (0.33) TSHRCA2CYP1A2CYP3A4
Hexane SCHEMBL17318268 0.75 SOAT1 (0.49) GABRA1GABRB2GABRG2GABRB3TSHR
SCHEMBL706192 0.75 ADRA2A (0.34) TSHRCYP1A2CYP3A4SLC6A2
SCHEMBL705168 0.75 AOC3 (0.42) TSHRLMNACYP1A2CYP3A4SLC6A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed