SCHEMBL3481473

SCHEMBL3481473

CCCO[Si](OCCC)(c1ccccc1)c1ccc(C)cc1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.36
TSHR P16473 1/20 0.36
ALOX12 P18054 1/20 0.36
ACHE P22303 1/20 0.36
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
DRD2 P14416 2/20 0.34
DRD4 P21917 2/20 0.34
DRD3 P35462 2/20 0.34
ALDH1A1 P00352 4/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
HPGD P15428 2/20 0.32
MAPT P10636 1/20 0.32
ATM Q13315 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
HTT P42858 1/20 0.32
NPC1 O15118 1/20 0.32
RAB9A P51151 1/20 0.32
CYP2C19 P33261 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3871457 0.92 ACHE (0.35) ACHEMEN1KMT2ADRD2DRD4
SCHEMBL706124 0.92 LMNA (0.38) LMNAMEN1KMT2AALDH1A1SMN1; SMN2
SCHEMBL106121 0.90 LMNA (0.39) LMNAMEN1KMT2AALDH1A1SMN1; SMN2
SCHEMBL3481508 0.86 TLR8 (0.33) LMNAMEN1KMT2AALDH1A1HPGD
SCHEMBL3482024 0.85 DUT (0.38) LMNATSHRALOX12ACHEMEN1
SCHEMBL3481554 0.85 LMNA (0.39) LMNATSHRALOX12ACHEMEN1
SCHEMBL19809312 0.85 LMNA (0.36) LMNAMEN1KMT2AALDH1A1HPGD
SCHEMBL3482334 0.84 TP53 (0.45) LMNAMEN1KMT2AALDH1A1SMN1; SMN2
SCHEMBL16476588 0.81 ALDH1A1 (0.35) LMNAMEN1KMT2AALDH1A1HPGD
SCHEMBL702280 0.81 LTA4H (0.46) TSHRALDH1A1TDP1CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed