SCHEMBL706337

SCHEMBL706337

CCCCCC(CC)O[SiH2]CCCC[SiH2]OC(CC)CCCCC

nearest known ligand 0.34

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
FDPS P14324 4/20 0.33
SMPD1 P17405 3/20 0.33
OPRM1 P35372 1/20 0.33
LAP3 P28838 2/20 0.31
LMNA P02545 1/20 0.31
DNM1 Q05193 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703777 0.96 FDPS (0.33) FDPSSMPD1OPRM1LAP3LMNA
SCHEMBL5575136 0.94 DNM1 (0.38) FDPSSMPD1LMNADNM1
SCHEMBL5574631 0.94 DNM1 (0.38) FDPSSMPD1LMNADNM1
SCHEMBL705253 0.94 OPRM1 (0.34) FDPSSMPD1OPRM1LAP3LMNA
SCHEMBL705857 0.94 PRKCA (0.33) FDPSDNM1
SCHEMBL5572078 0.92 DNM1 (0.34) FDPSSMPD1LAP3LMNADNM1
SCHEMBL5575104 0.92 DNM1 (0.34) FDPSSMPD1LAP3LMNADNM1
SCHEMBL5575087 0.89 PRKCA (0.33) FDPSDNM1
SCHEMBL705853 0.89 OPRM1 (0.34) FDPSSMPD1OPRM1LMNADNM1
SCHEMBL705786 0.89 DNM1 (0.36) FDPSSMPD1OPRM1LMNADNM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed