SCHEMBL705253

SCHEMBL705253

CCCCCC(CC)O[SiH2]CC[SiH2]OC(CC)CCCCC

nearest known ligand 0.35

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
OPRM1 P35372 1/20 0.34
FDPS P14324 4/20 0.34
SMPD1 P17405 3/20 0.34
LAP3 P28838 2/20 0.32
LMNA P02545 1/20 0.32
DNM1 Q05193 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703777 0.94 FDPS (0.33) OPRM1FDPSSMPD1LAP3LMNA
SCHEMBL706337 0.94 FDPS (0.33) OPRM1FDPSSMPD1LAP3LMNA
SCHEMBL706820 0.93 ALDH1A1 (0.33) FDPSDNM1
SCHEMBL704464 0.89 OPRM1 (0.36) OPRM1FDPSSMPD1LMNADNM1
SCHEMBL702775 0.89 DNM1 (0.37) OPRM1FDPSSMPD1LMNADNM1
SCHEMBL5574631 0.88 DNM1 (0.38) FDPSSMPD1LMNADNM1
SCHEMBL5575136 0.88 DNM1 (0.38) FDPSSMPD1LMNADNM1
SCHEMBL5570824 0.87 PRKCA (0.33) FDPSDNM1
SCHEMBL5575087 0.87 PRKCA (0.33) FDPSDNM1
SCHEMBL706863 0.87 DNM1 (0.41) OPRM1FDPSSMPD1LMNADNM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed