SCHEMBL706347

SCHEMBL706347

CC(=O)O[Si](OC(C)=O)(c1ccc([Si](OC(C)=O)(OC(C)=O)C(C)(C)C)cc1)C(C)(C)C

nearest known ligand 0.31

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 1/20 0.31
LMNA P02545 1/20 0.30
HPGD P15428 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702604 0.90 CES2 (0.38) CYP3A4HPGD
SCHEMBL705301 0.78 ACHE (0.31) CYP3A4LMNAHPGD
SCHEMBL706708 0.72 HPGD (0.34) CYP3A4LMNAHPGD
SCHEMBL706767 0.70 HPGD (0.38) LMNAHPGD
SCHEMBL705277 0.70 HPGD (0.38) LMNAHPGD
SCHEMBL704700 0.69 CES2 (0.38) CYP3A4HPGD
SCHEMBL476117 0.69 CES2 (0.38) CYP3A4HPGD
SCHEMBL707057 0.69 NR1H2 (0.30)
SCHEMBL15662634 0.68 IKBKB (0.41) LMNA
SCHEMBL705215 0.67 ESR1 (0.37) LMNAHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed