SCHEMBL706820

SCHEMBL706820

CCCCC(CC)O[SiH2]CC[SiH2]OC(CC)CCCC

nearest known ligand 0.33

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.33
PRKCA P17252 1/20 0.33
PRKCD Q05655 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
CTSK P43235 1/20 0.33
CA2 P00918 3/20 0.32
CA1 P00915 2/20 0.32
TSHR P16473 2/20 0.32
CYP3A4 P08684 2/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
FDPS P14324 1/20 0.32
DNM1 Q05193 2/20 0.32
L3MBTL1 Q9Y468 1/20 0.31
MAPK1 P28482 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5575087 0.93 PRKCA (0.33) ALDH1A1PRKCAPRKCDTDP1CTSK
SCHEMBL5570824 0.93 PRKCA (0.33) ALDH1A1PRKCAPRKCDTDP1CTSK
SCHEMBL705253 0.93 OPRM1 (0.34) FDPSDNM1
SCHEMBL705902 0.93 PRKCA (0.33) ALDH1A1PRKCAPRKCDTDP1CTSK
SCHEMBL705857 0.93 PRKCA (0.33) ALDH1A1PRKCAPRKCDTDP1CTSK
SCHEMBL703498 0.91 DNM1 (0.35) ALDH1A1TDP1CTSKCA2CA1
SCHEMBL5574631 0.90 DNM1 (0.38) ALDH1A1PRKCAPRKCDTDP1CTSK
SCHEMBL5575136 0.90 DNM1 (0.38) ALDH1A1PRKCAPRKCDTDP1CTSK
SCHEMBL702589 0.88 DNM1 (0.33) ALDH1A1TDP1CTSKDNM1
SCHEMBL704353 0.88 PRKCA (0.31) PRKCAPRKCD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed