SCHEMBL703498

SCHEMBL703498

CCCCC(CCCC)O[SiH2]CC[SiH2]OC(CCCC)CCCC

nearest known ligand 0.35

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 2/20 0.35
ALDH1A1 P00352 3/20 0.31
TDP1 Q9NUW8 1/20 0.31
CTSK P43235 1/20 0.31
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30
TSHR P16473 2/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
CYP3A4 P08684 1/20 0.30
FDPS P14324 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702589 0.98 DNM1 (0.33) DNM1ALDH1A1TDP1CTSK
SCHEMBL702775 0.95 DNM1 (0.37) DNM1CA2TSHRFDPS
SCHEMBL706863 0.93 DNM1 (0.41) DNM1CA2TSHRFDPS
SCHEMBL704530 0.93 DNM1 (0.41) DNM1CA2TSHRFDPS
SCHEMBL707568 0.93 DNM1 (0.33) DNM1ALDH1A1TDP1CTSK
SCHEMBL703662 0.93 DNM1 (0.33) DNM1ALDH1A1TDP1CTSK
SCHEMBL704464 0.91 OPRM1 (0.36) DNM1TSHRFDPS
SCHEMBL703536 0.91 CTSK (0.33) DNM1CTSK
SCHEMBL706820 0.91 ALDH1A1 (0.33) DNM1ALDH1A1TDP1CTSKCA1
SCHEMBL705226 0.91 CTSK (0.33) DNM1CTSK

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
EP-2163664-A1 Method for depositing si-containing film, insulator film, and semiconductor device Shin-Etsu Chemical Co., Ltd. (JP) 2010-03-17 EP disclosed
US-20100061915-A1 METHOD FOR DEPOSITING SI-CONTAINING FILM, INSULATOR FILM, AND SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed