SCHEMBL702589

SCHEMBL702589

CCCCC(CCC)O[SiH2]CC[SiH2]OC(CCC)CCCC

nearest known ligand 0.33

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 2/20 0.33
CTSK P43235 1/20 0.33
ALDH1A1 P00352 2/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703498 0.98 DNM1 (0.35) DNM1CTSKALDH1A1TDP1
SCHEMBL5570833 0.93 CTSK (0.33) DNM1CTSK
SCHEMBL705226 0.93 CTSK (0.33) DNM1CTSK
SCHEMBL702775 0.93 DNM1 (0.37) DNM1
SCHEMBL703536 0.93 CTSK (0.33) DNM1CTSK
SCHEMBL704464 0.93 OPRM1 (0.36) DNM1
SCHEMBL704530 0.91 DNM1 (0.41) DNM1
SCHEMBL706863 0.91 DNM1 (0.41) DNM1
SCHEMBL705073 0.91 LMNA (0.37) DNM1
SCHEMBL703662 0.91 DNM1 (0.33) DNM1CTSKALDH1A1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed