SCHEMBL707194

SCHEMBL707194

CCCCO[SiH](c1ccccc1)C(C)C

nearest known ligand 0.42

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.42
CYP2C9 P11712 2/20 0.37
CYP2C19 P33261 2/20 0.37
CYP1A2 P05177 1/20 0.37
TSHR P16473 4/20 0.36
TDP1 Q9NUW8 2/20 0.36
L3MBTL1 Q9Y468 2/20 0.36
ALDH1A1 P00352 2/20 0.33
NPSR1 Q6W5P4 1/20 0.33
TP53 P04637 1/20 0.33
CYP3A4 P08684 1/20 0.33
MAPK1 P28482 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL715338 0.89 LMNA (0.35) LTA4HALDH1A1
SCHEMBL705403 0.81 L3MBTL1 (0.32) LTA4HL3MBTL1TP53
SCHEMBL2769933 0.77 LTA4H (0.47) LTA4HCYP2C9CYP2C19CYP1A2TSHR
SCHEMBL864473 0.77 LTA4H (0.47) LTA4HCYP2C9CYP2C19CYP1A2TSHR
SCHEMBL703008 0.76 LTA4H (0.46) LTA4HCYP2C9CYP2C19CYP1A2TSHR
SCHEMBL702728 0.74 LTA4H (0.44) LTA4HCYP2C9CYP2C19CYP1A2TSHR
SCHEMBL706087 0.73 LTA4H (0.43) LTA4HCYP2C9CYP2C19CYP1A2TSHR
SCHEMBL706389 0.73 LTA4H (0.43) LTA4HCYP2C9CYP2C19CYP1A2TSHR
SCHEMBL28994570 0.73 LTA4H (0.43) LTA4HCYP2C9CYP2C19CYP1A2TSHR
SCHEMBL15914634 0.72 TDP1 (0.32) CYP2C9CYP2C19CYP1A2TDP1L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed