SCHEMBL707500

SCHEMBL707500

CCCCO[Si](OCCCC)(c1ccc([Si](OCCCC)(OCCCC)C(C)C)cc1)C(C)C

nearest known ligand 0.38

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 1/20 0.35
CYP2D6 P10635 1/20 0.35
LTA4H P09960 2/20 0.33
CYP19A1 P11511 1/20 0.33
CYP1A2 P05177 1/20 0.32
CYP2C9 P11712 1/20 0.32
CYP2C19 P33261 1/20 0.32
NR5A1 Q13285 1/20 0.32
NPC1 O15118 2/20 0.32
RAB9A P51151 2/20 0.32
SMN1; SMN2 Q16637 2/20 0.32
HPGD P15428 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
HSD17B10 Q99714 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703885 0.91 LTA4H (0.42) CYP2D6LTA4HCYP19A1CYP1A2CYP2C9
SCHEMBL703566 0.88
SCHEMBL704621 0.82 CYP2D6 (0.36) CYP3A4CYP2D6LTA4HCYP19A1CYP1A2
SCHEMBL703393 0.79
SCHEMBL708164 0.78 LMNA (0.35) LTA4HHPGD
SCHEMBL977974 0.74 CYP2D6 (0.39) CYP3A4CYP2D6LTA4HCYP19A1CYP1A2
SCHEMBL426692 0.73 ADRB2 (0.38) CYP3A4
SCHEMBL706261 0.73 LTA4H (0.43) CYP3A4CYP2D6LTA4HCYP19A1CYP1A2
SCHEMBL705222 0.72 CYP2C9 (0.41) CYP3A4CYP2D6LTA4HCYP19A1CYP1A2
SCHEMBL704788 0.72 CYP2C9 (0.39) CYP3A4CYP2D6LTA4HCYP19A1CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed