SCHEMBL703885

SCHEMBL703885

CCCCO[Si](OCCCC)(c1ccccc1)C(C)C

nearest known ligand 0.42

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.42
CYP1A2 P05177 2/20 0.37
CYP2C9 P11712 2/20 0.37
CYP2C19 P33261 2/20 0.37
L3MBTL1 Q9Y468 2/20 0.36
TSHR P16473 2/20 0.36
TDP1 Q9NUW8 1/20 0.36
CYP2D6 P10635 1/20 0.36
CYP19A1 P11511 1/20 0.36
KDM4E B2RXH2 1/20 0.34
MAPK1 P28482 1/20 0.34
FGFR1 P11362 1/20 0.33
TLR8 Q9NR97 1/20 0.33
ALDH1A1 P00352 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707500 0.91 CYP3A4 (0.35) LTA4HCYP1A2CYP2C9CYP2C19L3MBTL1
SCHEMBL708164 0.89 LMNA (0.35) LTA4HTSHRALDH1A1
SCHEMBL706261 0.84 LTA4H (0.43) LTA4HCYP1A2CYP2C9CYP2C19L3MBTL1
SCHEMBL705583 0.82 LTA4H (0.42) LTA4HCYP1A2CYP2C9CYP2C19L3MBTL1
SCHEMBL705429 0.81 L3MBTL1 (0.32) LTA4HL3MBTL1
SCHEMBL703566 0.79
SCHEMBL1315053 0.77 LTA4H (0.41) LTA4HCYP1A2CYP2C9CYP2C19L3MBTL1
SCHEMBL705748 0.77 DUT (0.47) LTA4HCYP1A2CYP2C9CYP2C19L3MBTL1
SCHEMBL431649 0.77 LTA4H (0.47) LTA4HCYP1A2CYP2C9CYP2C19L3MBTL1
SCHEMBL431558 0.77 LTA4H (0.47) LTA4HCYP1A2CYP2C9CYP2C19L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed