SCHEMBL707771

SCHEMBL707771

O=C(CCCC(c1ccccc1)c1ccccc1)O[SiH3]

nearest known ligand 0.46

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
HRH1 P35367 4/20 0.46
HTR2A P28223 3/20 0.46
TBXAS1 P24557 1/20 0.44
GRM2 Q14416 1/20 0.44
GRM3 Q14832 1/20 0.44
MTNR1A P48039 1/20 0.42
MTNR1B P49286 1/20 0.42
CNR1 P21554 2/20 0.41
EPHX2 P34913 2/20 0.41
CNR2 P34972 1/20 0.41
C3AR1 Q16581 1/20 0.41
SIGMAR1 Q99720 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27946531 0.93 TBXAS1 (0.52) HRH1HTR2ATBXAS1GRM2GRM3
SCHEMBL7056883 0.93 TBXAS1 (0.52) HRH1HTR2ATBXAS1GRM2GRM3
SCHEMBL7057732 0.93 TBXAS1 (0.52) HRH1HTR2ATBXAS1GRM2GRM3
SCHEMBL705573 0.93 MTNR1A (0.44) HRH1HTR2ATBXAS1GRM2GRM3
SCHEMBL2987920 0.81 PRSS1 (0.51) HRH1HTR2ATBXAS1GRM2GRM3
SCHEMBL8494372 0.79 HRH1 (0.54) HRH1HTR2ATBXAS1GRM2GRM3
SCHEMBL5692956 0.79 TBXAS1 (0.63) HRH1HTR2ATBXAS1GRM2GRM3
SCHEMBL28556129 0.77 LMNA (0.51) HRH1HTR2ATBXAS1MTNR1AMTNR1B
SCHEMBL4219820 0.77 HRH1 (0.57) HRH1HTR2ATBXAS1GRM2GRM3
Hydrochloric Acid SCHEMBL2861647 0.77 TBXAS1 (0.61) HRH1HTR2ATBXAS1GRM2GRM3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed