SCHEMBL707817

SCHEMBL707817

CCCC(c1ccccc1)[SiH](F)F

nearest known ligand 0.42

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
AOC3 Q16853 2/20 0.42
LMNA P02545 1/20 0.39
HRH1 P35367 6/20 0.36
HTR2A P28223 5/20 0.36
SIGMAR1 Q99720 1/20 0.36
MTNR1A P48039 1/20 0.35
MTNR1B P49286 1/20 0.35
TAAR1 Q96RJ0 2/20 0.34
RIPK1 Q13546 1/20 0.34
TRPA1 O75762 2/20 0.34
OPRM1 P35372 1/20 0.34
OPRD1 P41143 1/20 0.34
OPRK1 P41145 1/20 0.34
OPRL1 P41146 1/20 0.34
ATM Q13315 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707339 0.83 LMNA (0.46) AOC3LMNAHRH1HTR2ATAAR1
SCHEMBL705291 0.81 AOC3 (0.43) AOC3LMNAHRH1HTR2ASIGMAR1
SCHEMBL10608215 0.79 AOC3 (0.46) AOC3LMNAHRH1HTR2ASIGMAR1
SCHEMBL524106 0.79 AOC3 (0.42) AOC3LMNAHRH1HTR2ASIGMAR1
SCHEMBL704370 0.76 AOC3 (0.40) AOC3LMNAHRH1HTR2ASIGMAR1
SCHEMBL703457 0.75 AOC3 (0.39) AOC3LMNAHRH1HTR2ASIGMAR1
SCHEMBL703614 0.73 AOC3 (0.38) AOC3LMNATAAR1RIPK1TRPA1
SCHEMBL706757 0.73 AOC3 (0.38) AOC3LMNAHRH1HTR2ASIGMAR1
SCHEMBL706248 0.73 AOC3 (0.38) AOC3LMNASIGMAR1MTNR1AMTNR1B
SCHEMBL107889 0.72 HRH1 (0.56) AOC3LMNAHRH1HTR2ASIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed