SCHEMBL706248

SCHEMBL706248

CCCC(c1ccccc1)[SiH](Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.38

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
AOC3 Q16853 2/20 0.38
SLC6A4 P31645 1/20 0.37
LMNA P02545 1/20 0.34
SCN4A P35499 2/20 0.34
LTA4H P09960 1/20 0.34
PPARG P37231 2/20 0.33
PPARA Q07869 2/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
MAPT P10636 1/20 0.33
HTT P42858 1/20 0.33
FFAR1 O14842 1/20 0.33
GPR84 Q9NQS5 1/20 0.33
MTNR1A P48039 1/20 0.33
MTNR1B P49286 1/20 0.33
CASR P41180 1/20 0.33
SIGMAR1 Q99720 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704671 0.85 LMNA (0.41) SLC6A4LMNASCN4ALTA4HFFAR1
SCHEMBL704370 0.81 AOC3 (0.40) AOC3LMNAKMT2ASIGMAR1
SCHEMBL703457 0.80 AOC3 (0.39) AOC3LMNAMEN1KMT2AL3MBTL1
SCHEMBL28449544 0.79 LTA4H (0.37) AOC3LMNALTA4HPPARGPPARA
SCHEMBL703614 0.79 AOC3 (0.38) AOC3SLC6A4LMNAMEN1KMT2A
SCHEMBL706757 0.79 AOC3 (0.38) AOC3SLC6A4LMNAMEN1KMT2A
SCHEMBL28453789 0.78 POLB (0.40) LMNALTA4HPPARGPPARAFFAR1
SCHEMBL28453255 0.76 LTA4H (0.35) AOC3LMNALTA4HPPARGPPARA
SCHEMBL702250 0.76 LTA4H (0.40) AOC3LMNALTA4HL3MBTL1SIGMAR1
SCHEMBL705291 0.75 AOC3 (0.43) AOC3LMNASIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed