Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NR4A1 | P22736 | 1/20 | 0.56 |
| ▸ | NR4A2 | P43354 | 1/20 | 0.56 |
| ▸ | NR4A3 | Q92570 | 1/20 | 0.56 |
| ▸ | CDC25B | P30305 | 2/20 | 0.50 |
| ▸ | PLK1 | P53350 | 1/20 | 0.50 |
| ▸ | PTK2B | Q14289 | 1/20 | 0.49 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.49 |
| ▸ | MMP3 | P08254 | 1/20 | 0.47 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.47 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.46 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.44 |
| ▸ | POLB | P06746 | 3/20 | 0.44 |
| ▸ | MEN1 | O00255 | 3/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.44 |
| ▸ | MAPT | P10636 | 3/20 | 0.44 |
| ▸ | HPGD | P15428 | 3/20 | 0.44 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.44 |
| ▸ | GMNN | O75496 | 2/20 | 0.44 |
| ▸ | LMNA | P02545 | 2/20 | 0.44 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3133999 | 0.85 | PTK2B (0.53) | NR4A1NR4A2NR4A3CDC25BPLK1 | |
| SCHEMBL775617 | 0.82 | NR4A1 (0.55) | NR4A1NR4A2NR4A3CDC25BPLK1 | |
| SCHEMBL9165434 | 0.81 | NR4A1 (0.53) | NR4A1NR4A2NR4A3CDC25BPLK1 | |
| SCHEMBL27450916 | 0.81 | NR4A1 (0.53) | NR4A1NR4A2NR4A3CDC25BPLK1 | |
| SCHEMBL7888117 | 0.80 | NR4A1 (0.45) | NR4A1NR4A2NR4A3CDC25BPLK1 | |
| SCHEMBL3698429 | 0.78 | PTK2B (0.55) | NR4A1NR4A2NR4A3CDC25BPLK1 | |
| Naphthoic Acid SCHEMBL559035 | 0.77 | NR4A1 (0.75) | NR4A1NR4A2NR4A3CDC25BPLK1 | |
| SCHEMBL22880334 | 0.77 | KMT2A (0.49) | NR4A1NR4A2NR4A3CDC25BPLK1 | |
| SCHEMBL559036 | 0.77 | KMT2A (0.49) | NR4A1NR4A2NR4A3CDC25BPLK1 | |
| SCHEMBL29600980 | 0.77 | KMT2A (0.49) | NR4A1NR4A2NR4A3CDC25BPLK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 661 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0592552-B1 | CHIRAL PHOSPHOLANES VIA CHIRAL 1,4-DIOL CYCLIC SULFATES | DU PONT (US) | 1997-05-28 | — | — | EP | claimed |
| US-5559267-A | ENANTIOMORPHS, STEREOCHEMICAL CONTROL AND ASSYMETRIC INDUCTION, HYDROGENATION OF UNSATURATED ESTERS, COORDINATION CATALYSTS | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 1996-09-24 | — | — | US | claimed |
| EP-0592552-A1 | CHIRAL PHOSPHOLANES VIA CHIRAL 1,4-DIOL CYCLIC SULFATES. | DU PONT (US) | 1994-04-20 | — | — | EP | claimed |
| WO-1993001199-A1 | CHIRAL PHOSPHOLANES VIA CHIRAL 1,4-DIOL CYCLIC SULFATES | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 1993-01-21 | — | — | WO | claimed |
| US-20260147274-A1 | SULFONIUM SALT TYPE MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-05-28 | — | — | US | disclosed |
| CN-116560190-B | Resist material and pattern forming method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-05-26 | — | — | CN | disclosed |
| US-20260139086-A1 | ONIUM SALT TYPE MONOMER, MONOMERIC PHOTO-ACID GENERATOR, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-05-21 | — | — | US | disclosed |
| US-20260133490-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-05-14 | — | — | US | disclosed |
| US-20260133491-A1 | ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-05-14 | — | — | US | disclosed |
| US-12625429-B2 | Resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-05-12 | — | — | US | disclosed |
| CN-122010808-A | Onium salt type monomer, polymer, chemically amplified resist composition, and pattern forming method | 信越化学工业株式会社 | 2026-05-12 | — | — | CN | disclosed |
| CN-122010809-A | Onium salt type monomer, polymer, chemically amplified resist composition, and pattern forming method | 信越化学工业株式会社 | 2026-05-12 | — | — | CN | disclosed |
| US-20110129777-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-06-02 | — | — | US | disclosed |
| US-7923195-B2 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-04-12 | — | — | US | disclosed |
| US-7887991-B2 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-02-15 | — | — | US | disclosed |
| US-20100227273-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-09-09 | — | — | US | disclosed |
| US-20100227274-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-09-09 | — | — | US | disclosed |
| US-20090297979-A1 | Polymerizable compound, polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20090202940-A1 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-13 | — | — | US | disclosed |
| US-20090202947-A1 | Positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO.,LTD (JP) | 2009-08-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12625429-B2 | Resist composition and pattern forming process | NAF1, CLIC1, H1-4 | NR4A1 61/4885NR4A2 816/4885NR4A3 1051/4885 |
| US-20260133491-A1 | ONIUM SALT MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | AGTR1, NAF1, NHERF1 | NR4A1 112/4885NR4A2 1232/4885NR4A3 1169/4885 |
| US-20260133490-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS | NAF1, FOXM1, CACNA1F | NR4A1 515/4885NR4A2 2913/4885NR4A3 2622/4885 |
| US-20260147274-A1 | SULFONIUM SALT TYPE MONOMER, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | RSU1, ETV6, NAF1 | NR4A1 351/4885NR4A2 1794/4885NR4A3 2179/4885 |
| US-20090297979-A1 | Polymerizable compound, polymer, positive resist composition, and patterning process using the same | PRRC2A, PUF60, POLR2B | NR4A1 2419/4885NR4A2 1432/4885NR4A3 2438/4885 |
| US-20260139086-A1 | ONIUM SALT TYPE MONOMER, MONOMERIC PHOTO-ACID GENERATOR, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | CLTA, ARCN1, CLTB | NR4A1 84/4885NR4A2 922/4885NR4A3 1327/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.