SCHEMBL7173521

SCHEMBL7173521

C=CCc1ccc2c(c1[N+](=O)[O-])C(=O)NC2=O

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ TDP1 Q9NUW8 2/20 0.40
▸ CYP3A4 P08684 1/20 0.40
▸ POLB P06746 2/20 0.36
▸ CASP3 P42574 5/20 0.33
▸ MAOA P21397 3/20 0.33
▸ MAOB P27338 2/20 0.33
▸ PARP1 P09874 2/20 0.33
▸ TDP2 O95551 1/20 0.32
▸ ELANE P08246 1/20 0.32
▸ SMN1; SMN2 Q16637 1/20 0.32
▸ ALDH1A1 P00352 2/20 0.31
▸ CASP6 P55212 2/20 0.31
▸ MEN1 O00255 1/20 0.31
▸ GAA P10253 1/20 0.31
▸ MAPT P10636 1/20 0.31
▸ RECQL P46063 1/20 0.31
▸ GFER P55789 1/20 0.31
▸ KMT2A Q03164 1/20 0.31
▸ CTDSP1 Q9GZU7 1/20 0.31
▸ L3MBTL1 Q9Y468 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10582955 0.77 PARP1 (0.37) CASP3MAOAMAOBPARP1ELANE
SCHEMBL8098589 0.76 TDP1 (0.39) TDP1CYP3A4POLBCASP3MAOA
SCHEMBL9503458 0.73 CYP3A4 (0.51) TDP1CYP3A4POLBCASP3MAOA
SCHEMBL8092353 0.72 ALDH1A1 (0.55) TDP1CYP3A4POLBCASP3MAOA
SCHEMBL28138230 0.72 CYP3A4 (0.46) TDP1CYP3A4POLBCASP3PARP1
SCHEMBL170914 0.72 GABRA1 (0.49) TDP1CYP3A4POLBCASP3PARP1
SCHEMBL27417533 0.71 ELANE (0.36) POLBCASP3PARP1ELANEALDH1A1
SCHEMBL11172226 0.71 ALDH1A1 (0.47) TDP1CYP3A4POLBALDH1A1MEN1
Ammonia Solution, Strong SCHEMBL3259478 0.71 GABRA1 (0.47) TDP1CYP3A4POLBCASP3PARP1
SCHEMBL11129605 0.70 TXNRD1 (0.40) TDP1CYP3A4POLBALDH1A1CASP6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108473475-A Method for producing aromatic series double imide and polyetherimide 沙特基础工业全球技术有限公司 2018-08-31 — — CN claimed
EP-1059291-A2 Process for preparing bis(ether anhydrides) GENERAL ELECTRIC COMPANY (US) 2000-12-13 — — EP claimed
US-6008374-A REACTING N-ALKYL NITROPHTHALIMIDE AND A BISPHENOL ALKALI METAL SALT TO FORM BISIMIDE, EXTRACTING THE FORMED BISIMIDE GENERAL ELECTRIC COMPANY (US) 1999-12-28 — — US claimed
EP-3397635-A1 METHODS FOR THE MANUFACTURE OF AN AROMATIC BISIMIDE AND A POLYETHERIMIDE SABIC Global Technologies B.V. (NL) 2018-11-07 — — EP disclosed
CN-108473475-A Method for producing aromatic series double imide and polyetherimide 沙特基础工业全球技术有限公司 2018-08-31 — — CN disclosed
CN-108473475-A Method for producing aromatic series double imide and polyetherimide 沙特基础工业全球技术有限公司 2018-08-31 — — CN disclosed
WO-2017117449-A1 METHODS FOR THE MANUFACTURE OF AN AROMATIC BISIMIDE AND A POLYETHERIMIDE SABIC GLOBAL TECHNOLOGIES B.V. (NL) 2017-07-06 — — WO disclosed
EP-1059291-A3 Process for preparing bis(ether anhydrides) GENERAL ELECTRIC COMPANY (US) 2003-10-22 — — EP disclosed
CN-1073993-C Process for preparing bis (ether anhydrides) using alkylamine derived bismides having low melting temperatures GEN ELECTRIC (US) 2001-10-31 — — CN disclosed
EP-1059291-A2 Process for preparing bis(ether anhydrides) GENERAL ELECTRIC COMPANY (US) 2000-12-13 — — EP disclosed
EP-1059291-A2 Process for preparing bis(ether anhydrides) GENERAL ELECTRIC COMPANY (US) 2000-12-13 — — EP disclosed
US-5719295-A FROM N-ALKYL NITROPHTHALAMIDE GENERAL ELECTRIC COMPANY (US) 1998-02-17 — — US disclosed
US-5719295-A FROM N-ALKYL NITROPHTHALAMIDE GENERAL ELECTRIC COMPANY (US) 1998-02-17 — — US disclosed
US-5536846-A NITRATION, PURIFICATION, LIQUID EXTRACTION, DRYING AND PURIFICATION THEN REACTION WITH ALKALI METAL BISPHENOL AND TRANSFORMATION GENERAL ELECTRIC COMPANY (US) 1996-07-16 — — US disclosed
US-5536846-A NITRATION, PURIFICATION, LIQUID EXTRACTION, DRYING AND PURIFICATION THEN REACTION WITH ALKALI METAL BISPHENOL AND TRANSFORMATION GENERAL ELECTRIC COMPANY (US) 1996-07-16 — — US disclosed
CN-1121514-A Process for preparing bis (ether anhydrides) using alkylamine derived bismides having low melting temperatures GEN ELECTRIC (US) 1996-05-01 — — CN disclosed
EP-0684232-A1 Process for preparing bis(ether anhydrides) GENERAL ELECTRIC COMPANY (US) 1995-11-29 — — EP disclosed
EP-0684232-A1 Process for preparing bis(ether anhydrides) GENERAL ELECTRIC COMPANY (US) 1995-11-29 — — EP disclosed
US-4902809-A Method for making N-substituted nitrophthalimides GENERAL ELECTRIC COMPANY (US) 1990-02-20 — — US disclosed
EP-0164409-B1 METHOD FOR MAKING N-SUBSTITUTED NITROPHTHALIMIDES GENERAL ELECTRIC COMPANY (US) 1989-08-02 — — EP disclosed
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