SCHEMBL7257971

SCHEMBL7257971

C=C(C)C(=O)OC(C)Oc1ccc(C)cc1.C=C(C)C(=O)OC1(CC)CCCC1.C=Cc1ccccc1O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7251880 0.94 KDM4E (0.30)
SCHEMBL7252956 0.86 CTSK (0.37)
SCHEMBL2773963 0.86 MAPT (0.35)
SCHEMBL7269137 0.85 LMNA (0.34)
SCHEMBL7252803 0.83 CTSL (0.32)
SCHEMBL7521250 0.83 APOBEC3A (0.36)
SCHEMBL5373653 0.83
Styrene SCHEMBL6858832 0.81 MEN1 (0.32)
SCHEMBL6367955 0.79 ADORA3 (0.30)
SCHEMBL2776503 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6641975-B2 Ternary copolymer of hydroxystyrene, tertiary alkyl (meth)acrylate and substitutable phenoxyalkyl (meth)acrylate; enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-11-04 US disclosed
US-20020039701-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-04 US disclosed