Benzene

Benzene

SCHEMBL73337

C=S(=O)=O.c1ccccc1.c1ccccc1

nearest known ligand 0.33

Full drug profile on Sugi Atlas →

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.33
TSHR P16473 1/20 0.33
EPHX2 P34913 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Benzene SCHEMBL5194700 1.00 TP53 (0.33) TP53TSHREPHX2
SCHEMBL72745 0.82
SCHEMBL4420181 0.76
Benzene SCHEMBL27282100 0.76 TP53 (0.43) TP53TSHREPHX2
Methane SCHEMBL2913020 0.76
SCHEMBL7764075 0.76
Hydrochloric Acid SCHEMBL6744530 0.76
Benzene SCHEMBL28900924 0.68 TP53 (0.50) TP53TSHR
Benzene SCHEMBL131360 0.68
Benzene SCHEMBL27487122 0.68 TP53 (0.50) TP53TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 68 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3382453-B1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHINETSU CHEMICAL CO (JP) 2023-09-20 EP disclosed
US-10416563-B2 Resist underlayer film composition, patterning process, and method for forming resist underlayer film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-09-17 US disclosed
EP-3382454-B1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHINETSU CHEMICAL CO (JP) 2019-07-24 EP disclosed
US-10241412-B2 Resist underlayer film composition, patterning process, and method for forming resist underlayer film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-03-26 US disclosed
US-20180284615-A1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-10-04 US disclosed
US-20180284614-A1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-10-04 US disclosed
EP-3382454-A1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM Shin-Etsu Chemical Co., Ltd. (JP) 2018-10-03 EP disclosed
EP-3382453-A1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM Shin-Etsu Chemical Co., Ltd. (JP) 2018-10-03 EP disclosed
EP-2657766-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2018-02-28 EP disclosed
US-9248693-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-7163778-B2 Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-16 US disclosed
US-20060263702-A1 Composition for forming intermediate layer containing sylylphenylene-based polymer and pattern-forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2006-11-23 US disclosed
US-20060234158-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-19 US disclosed
US-20060147836-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed
US-20050079446-A1 Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050079440-A1 Novel polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050014092-A1 Novel compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-20 US disclosed
US-20040259037-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-23 US disclosed
US-20040241577-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-02 US disclosed
US-20040191479-A1 Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-09-30 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20180284615-A1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM GPX4, PLOD1, AQP1 TP53 3048/4885TSHR 4593/4885EPHX2 125/4885
US-10416563-B2 Resist underlayer film composition, patterning process, and method for forming resist underlayer film PRDX1, PRDX4, QSOX1 TP53 4509/4885TSHR 3507/4885EPHX2 231/4885
US-20180284614-A1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM PRDX1, PRDX4, QSOX1 TP53 4509/4885TSHR 3507/4885EPHX2 231/4885
US-10241412-B2 Resist underlayer film composition, patterning process, and method for forming resist underlayer film GPX4, PLOD1, AQP1 TP53 3048/4885TSHR 4593/4885EPHX2 125/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.