Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TP53 | P04637 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Benzene SCHEMBL5194700 | 1.00 | TP53 (0.33) | TP53TSHREPHX2 | |
| SCHEMBL72745 | 0.82 | — | — | |
| SCHEMBL4420181 | 0.76 | — | — | |
| Benzene SCHEMBL27282100 | 0.76 | TP53 (0.43) | TP53TSHREPHX2 | |
| Methane SCHEMBL2913020 | 0.76 | — | — | |
| SCHEMBL7764075 | 0.76 | — | — | |
| Hydrochloric Acid SCHEMBL6744530 | 0.76 | — | — | |
| Benzene SCHEMBL28900924 | 0.68 | TP53 (0.50) | TP53TSHR | |
| Benzene SCHEMBL131360 | 0.68 | — | — | |
| Benzene SCHEMBL27487122 | 0.68 | TP53 (0.50) | TP53TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 68 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3382453-B1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | SHINETSU CHEMICAL CO (JP) | 2023-09-20 | — | — | EP | disclosed |
| US-10416563-B2 | Resist underlayer film composition, patterning process, and method for forming resist underlayer film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-09-17 | — | — | US | disclosed |
| EP-3382454-B1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | SHINETSU CHEMICAL CO (JP) | 2019-07-24 | — | — | EP | disclosed |
| US-10241412-B2 | Resist underlayer film composition, patterning process, and method for forming resist underlayer film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-03-26 | — | — | US | disclosed |
| US-20180284615-A1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-10-04 | — | — | US | disclosed |
| US-20180284614-A1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-10-04 | — | — | US | disclosed |
| EP-3382454-A1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | Shin-Etsu Chemical Co., Ltd. (JP) | 2018-10-03 | — | — | EP | disclosed |
| EP-3382453-A1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | Shin-Etsu Chemical Co., Ltd. (JP) | 2018-10-03 | — | — | EP | disclosed |
| EP-2657766-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2018-02-28 | — | — | EP | disclosed |
| US-9248693-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-02-02 | — | — | US | disclosed |
| US-7163778-B2 | Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-16 | — | — | US | disclosed |
| US-20060263702-A1 | Composition for forming intermediate layer containing sylylphenylene-based polymer and pattern-forming method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2006-11-23 | — | — | US | disclosed |
| US-20060234158-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20060147836-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-07-06 | — | — | US | disclosed |
| US-20050079446-A1 | Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-20050079440-A1 | Novel polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-20050014092-A1 | Novel compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-20 | — | — | US | disclosed |
| US-20040259037-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-23 | — | — | US | disclosed |
| US-20040241577-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-02 | — | — | US | disclosed |
| US-20040191479-A1 | Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-09-30 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20180284615-A1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | GPX4, PLOD1, AQP1 | TP53 3048/4885TSHR 4593/4885EPHX2 125/4885 |
| US-10416563-B2 | Resist underlayer film composition, patterning process, and method for forming resist underlayer film | PRDX1, PRDX4, QSOX1 | TP53 4509/4885TSHR 3507/4885EPHX2 231/4885 |
| US-20180284614-A1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | PRDX1, PRDX4, QSOX1 | TP53 4509/4885TSHR 3507/4885EPHX2 231/4885 |
| US-10241412-B2 | Resist underlayer film composition, patterning process, and method for forming resist underlayer film | GPX4, PLOD1, AQP1 | TP53 3048/4885TSHR 4593/4885EPHX2 125/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.