Acetic Acid

Acetic Acid

SCHEMBL7530113

CC(=O)O.CCc1ccc(N)c(CC)c1CC

nearest known ligand 0.36

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Known targets — ChEMBL curated mechanism

ADRA2AADRA2BADRA2CADRB2AGTR1AVPR1AAVPR1BAVPR2BDKRB2CALCRCHRNA3CHRNB4ESR1ESR2GHSRGNRHRGSC1HSPA8MALT1MC1RMC4RNOS1NOS2NOS3OPRK1OXTRRAMP1RAMP2RAMP3SCN5ASSTR1SSTR2SSTR3SSTR4SSTR5dacAdacBdacCfolPftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO

The experimentally established mechanism targets of Acetic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.36
MAPT P10636 4/20 0.36
POLB P06746 2/20 0.36
KDM4E B2RXH2 4/20 0.33
GABRA1 P14867 3/20 0.33
GABRB2 P47870 3/20 0.33
GABRP O00591 2/20 0.33
GABRD O14764 2/20 0.33
GABRB1 P18505 2/20 0.33
GABRG2 P18507 2/20 0.33
GABRB3 P28472 2/20 0.33
GABRA5 P31644 2/20 0.33
GABRA3 P34903 2/20 0.33
GABRA2 P47869 2/20 0.33
GABRA4 P48169 2/20 0.33
GABRE P78334 2/20 0.33
GABRA6 Q16445 2/20 0.33
GABRG1 Q8N1C3 2/20 0.33
GABRG3 Q99928 2/20 0.33
GABRQ Q9UN88 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Bicarbonate SCHEMBL21957733 0.94 ALDH1A1 (0.37) ALDH1A1MAPTPOLBKDM4EGABRA1
Oxalic Acid SCHEMBL21957810 0.92 ALDH1A1 (0.36) ALDH1A1MAPTPOLBKDM4EGABRA1
Propionic Acid SCHEMBL21957789 0.90 FFAR3 (0.39) ALDH1A1MAPTPOLBKDM4EGABRA1
SCHEMBL396164 0.89 POLB (0.41) ALDH1A1MAPTPOLBKDM4EGABRA1
Malonic Acid SCHEMBL21957772 0.89 ALDH1A1 (0.35) ALDH1A1MAPTPOLBKDM4EGABRA1
Malonic Acid SCHEMBL29264766 0.89 ALDH1A1 (0.35) ALDH1A1MAPTPOLBKDM4EGABRA1
Hydrochloric Acid SCHEMBL5510042 0.87 POLB (0.40) ALDH1A1MAPTPOLBGABRA1GABRB2
Bromide SCHEMBL5088452 0.87 POLB (0.40) ALDH1A1MAPTPOLBGABRA1GABRB2
Bromide SCHEMBL16928609 0.87 POLB (0.40) ALDH1A1MAPTPOLBGABRA1GABRB2
Water SCHEMBL188047 0.87 POLB (0.44) ALDH1A1MAPTPOLBGABRA1GABRB2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
US-12174541-B2 Composition for forming silicon-containing resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-12-24 US disclosed
CN-112286000-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-12-03 CN disclosed
CN-111856882-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-11-29 CN disclosed
US-20240319598-A1 Composition For Forming Silicon-Containing Resist Underlayer Film And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-09-26 US disclosed
EP-4435515-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-09-25 EP disclosed
US-12085857-B2 Composition for forming silicon-containing resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-09-10 US disclosed
CN-118620392-A Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-09-10 CN disclosed
US-20200159120-A1 THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-05-21 US disclosed
EP-0872469-B1 Process for producing aldehyde acids or salts thereof UNION CARBIDE CHEM PLASTIC (US) 2002-03-20 EP disclosed
EP-0975590-A1 EPSILON CAPROLACTAM COMPOSITIONS AND BYPRODUCTS UNION CARBIDE CHEMICALS & PLASTICS TECHNOLOGY CORPORATION (US) 2000-02-02 EP disclosed
EP-0975591-A1 PROCESSES FOR PRODUCING EPSILON CAPROLACTAMS UNION CARBIDE CHEMICALS & PLASTICS TECHNOLOGY CORPORATION (US) 2000-02-02 EP disclosed
US-5962680-A Processes for producing epsilon caprolactams UNION CARBIDE CHEMICALS & PLASTICS TECHNOLOGY CORPORATION (US) 1999-10-05 US disclosed
US-5925754-A REDUCTING BY-PRODUCTS; CHEMICAL INTERMEDIATE FOR NYLON UNION CARBIDE CHEMICALS & PLASTICS TECHNOLOGY CORPORATION (US) 1999-07-20 US disclosed
US-5919978-A Processes for producing aldehyde acids or salts UNION CARBIDE CHEMICALS & PLASTICS TECHNOLOGY CORPORATION (US) 1999-07-06 US disclosed
WO-1998046564-A1 EPSILON CAPROLACTAM COMPOSITIONS AND BYPRODUCTS UNION CARBIDE CHEMICALS & PLASTICS TECHNOLOGY CORPORATION (US) 1998-10-22 WO disclosed
WO-1998046565-A1 PROCESSES FOR PRODUCING EPSILON CAPROLACTAMS UNION CARBIDE CHEMICALS & PLASTICS TECHNOLOGY CORPORATION (US) 1998-10-22 WO disclosed
EP-0872469-A1 Process for producing aldehyde acids or salts thereof UNION CARBIDE CHEMICALS & PLASTICS TECHNOLOGY CORPORATION (US) 1998-10-21 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200159120-A1 THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS RPS4X, SIK3, MLX ALDH1A1 4644/4885MAPT 1945/4885POLB 1364/4885
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SMC1A, CDH1, SMC4 ALDH1A1 1586/4885MAPT 811/4885POLB 333/4885
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process RPS4X, SIK3, MLX ALDH1A1 4644/4885MAPT 1945/4885POLB 1364/4885
US-20260118767-A1 REVERSE PATTERNING PROCESS EFNA1, EPHA4, ETV6 ALDH1A1 4452/4885MAPT 2567/4885POLB 850/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.