Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.41 |
| ▸ | TSHR | P16473 | 3/20 | 0.38 |
| ▸ | THRB | P10828 | 1/20 | 0.36 |
| ▸ | HSD11B1 | P28845 | 2/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1310160 | 0.85 | ALDH1A1 (0.42) | ALDH1A1TSHRTHRBHSD11B1 | |
| SCHEMBL3415852 | 0.84 | THRB (0.41) | ALDH1A1TSHRTHRBSMN1; SMN2 | |
| SCHEMBL15928282 | 0.83 | ALDH1A1 (0.41) | ALDH1A1TSHRTHRBHSD11B1 | |
| SCHEMBL14795024 | 0.81 | ALDH1A1 (0.44) | ALDH1A1TSHRTHRB | |
| SCHEMBL3053050 | 0.81 | ALDH1A1 (0.39) | ALDH1A1TSHRTHRBHSD11B1 | |
| SCHEMBL75649 | 0.81 | ALDH1A1 (0.39) | ALDH1A1TSHRTHRBHSD11B1 | |
| SCHEMBL3407069 | 0.80 | TSHR (0.47) | ALDH1A1TSHRTHRB | |
| SCHEMBL22811898 | 0.80 | HSD11B1 (0.51) | ALDH1A1TSHRTHRBHSD11B1SMN1; SMN2 | |
| SCHEMBL3053049 | 0.78 | ALDH1A1 (0.37) | ALDH1A1TSHRTHRBHSD11B1 | |
| SCHEMBL3797993 | 0.76 | ALDH1A1 (0.54) | ALDH1A1TSHRTHRB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11874603-B2 | Photoresist composition comprising amide compound and pattern formation methods using the same | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2024-01-16 | — | — | US | disclosed |
| US-11874603-B2 | Photoresist composition comprising amide compound and pattern formation methods using the same | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2024-01-16 | — | — | US | disclosed |
| US-11829069-B2 | Photoresist compositions and methods | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2023-11-28 | — | — | US | disclosed |
| US-20230099348-A1 | PHOTORESIST COMPOSITION COMPRISING AMIDE COMPOUND AND PATTERN FORMATION METHODS USING THE SAME | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2023-03-30 | — | — | US | disclosed |
| EP-2485090-B1 | Radiation-sensitive resin composition for forming resist pattern | JSR CORP (JP) | 2020-12-23 | — | — | EP | disclosed |
| US-20180203352-A1 | MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2018-07-19 | — | — | US | disclosed |
| US-20180059545-A1 | MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2018-03-01 | — | — | US | disclosed |
| US-20170090287-A1 | OVERCOAT COMPOSITIONS AND METHODS FOR PHOTOLITHOGRAPHY | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2017-03-30 | — | — | US | disclosed |
| US-20170090283-A1 | PHOTORESIST COMPOSITIONS AND METHODS | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2017-03-30 | — | — | US | disclosed |
| US-20170090283-A1 | PHOTORESIST COMPOSITIONS AND METHODS | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2017-03-30 | — | — | US | disclosed |
| US-20120308928-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND AND METHOD OF PRODUCING THE SAME | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| WO-2012157352-A1 | PHOTORESIST COMPOSITION | JSR株式会社 (JP) | 2012-11-22 | — | — | WO | disclosed |
| US-20120202150-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120202150-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2012-08-09 | — | — | US | disclosed |
| EP-2485090-A1 | Radiation-sensitive resin composition for forming resist pattern | JSR Corporation (JP) | 2012-08-08 | — | — | EP | disclosed |
| US-20120108043-A1 | PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-03 | — | — | US | disclosed |
| US-8129100-B2 | Double patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-06 | — | — | US | disclosed |
| US-20100266954-A1 | ADAMANTANE DERIVATIVE, METHOD FOR PRODUCING THE SAME, AND CURING COMPOSITION CONTAINING ADAMANTANE DERIVATIVE | IDEMITSU KOSAN CO., LTD. (JP) | 2010-10-21 | — | — | US | disclosed |
| US-20100266954-A1 | ADAMANTANE DERIVATIVE, METHOD FOR PRODUCING THE SAME, AND CURING COMPOSITION CONTAINING ADAMANTANE DERIVATIVE | IDEMITSU KOSAN CO., LTD. (JP) | 2010-10-21 | — | — | US | disclosed |
| US-20090253084-A1 | DOUBLE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-08 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170090287-A1 | OVERCOAT COMPOSITIONS AND METHODS FOR PHOTOLITHOGRAPHY | OGT, COLGALT1, PARG | ALDH1A1 2382/4885TSHR 4812/4885THRB 4598/4885 |
| US-20100266954-A1 | ADAMANTANE DERIVATIVE, METHOD FOR PRODUCING THE SAME, AND CURING COMPOSITION CONTAINING ADAMANTANE DERIVATIVE | APP, TET1, AMD1 | ALDH1A1 8/4885TSHR 4139/4885THRB 3702/4885 |
| US-20180059545-A1 | MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS | PARG, LCP1, ALG3 | ALDH1A1 894/4885TSHR 4727/4885THRB 4517/4885 |
| US-20170090283-A1 | PHOTORESIST COMPOSITIONS AND METHODS | PARG, PNN, PARN | ALDH1A1 4826/4885TSHR 4722/4885THRB 4747/4885 |
| US-20180203352-A1 | MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS | MAP1LC3C, LCP1, PIN1 | ALDH1A1 2061/4885TSHR 4290/4885THRB 4285/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.