Known targets — ChEMBL curated mechanism
FGFR1FGFR2FGFR3FGFR4FLT1FLT4KDRPDGFRAPDGFRB
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PSIP1 | O75475 | 1/20 | 0.41 |
| ▸ | CA12 | O43570 | 2/20 | 0.41 |
| ▸ | CA2 | P00918 | 2/20 | 0.41 |
| ▸ | CA9 | Q16790 | 2/20 | 0.41 |
| ▸ | KCNN4 | O15554 | 1/20 | 0.34 |
| ▸ | NR3C2 | P08235 | 1/20 | 0.33 |
| ▸ | CES2 | O00748 | 1/20 | 0.33 |
| ▸ | CES1 | P23141 | 1/20 | 0.33 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | HTT | P42858 | 1/20 | 0.33 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
| ▸ | ESR1 | P03372 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Sulfuric Acid SCHEMBL482693 | 0.89 | CA12 (0.36) | PSIP1CA12CA2CA9LMNA | |
| SCHEMBL7584253 | 0.88 | CA12 (0.37) | PSIP1CA12CA2CA9CES2 | |
| Sulfuric Acid SCHEMBL597317 | 0.86 | CA12 (0.35) | PSIP1CA12CA2CA9LMNA | |
| SCHEMBL5465356 | 0.85 | PABPC1 (0.40) | PSIP1CA12CA2CA9CES2 | |
| Sulfuric Acid SCHEMBL597318 | 0.84 | TSHR (0.41) | PSIP1CA12CA2CA9LMNA | |
| SCHEMBL4485964 | 0.84 | PSIP1 (0.43) | PSIP1CA12CA2CA9KCNN4 | |
| SCHEMBL4446972 | 0.83 | HTR6 (0.42) | PSIP1CA12CA2CA9LMNA | |
| SCHEMBL4635239 | 0.81 | HTR1A (0.38) | CA12CA2CA9LMNAHTT | |
| Sulfuric Acid SCHEMBL482694 | 0.79 | TSHR (0.44) | PSIP1CA12CA2CA9LMNA | |
| Trifluoromethanesulfonic Acid SCHEMBL36457 | 0.79 | GPR3 (0.47) | CA2CA9HSD11B1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12613465-B2 | Photosensitive resin composition and method for producing cured relief pattern | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2026-04-28 | — | — | US | disclosed |
| US-12405198-B2 | Photosensitive resin composition, method for selecting photosensitive resin composition, method for producing patterned cured film, and method for producing semiconductor device | RESONAC CORPORATION (JP) | 2025-09-02 | — | — | US | disclosed |
| US-20240361697-A1 | METHOD FOR SELECTING PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERNED CURED FILM, CURED FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | RESONAC CORPORATION (JP) | 2024-10-31 | — | — | US | disclosed |
| US-20240329525-A1 | PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2024-10-03 | — | — | US | disclosed |
| WO-2024161658-A1 | AIRTIGHT STRUCTURE, METHOD FOR MANUFACTURING SAME, AND BASE RESIN COMPOSITION FOR MAINTAINING AIRTIGHTNESS | 株式会社レゾナック | 2024-08-08 | — | — | WO | disclosed |
| US-20240210827-A1 | PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2024-06-27 | — | — | US | disclosed |
| CN-117280447-A | Photosensitive resin composition selection method, pattern cured film production method, cured film, semiconductor device, and semiconductor device production method | 株式会社力森诺科 | 2023-12-22 | — | — | CN | disclosed |
| WO-2023195202-A1 | HYBRID BONDING INSULATION FILM-FORMING MATERIAL, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | ＨＤマイクロシステムズ株式会社 | 2023-10-12 | — | — | WO | disclosed |
| US-20230221639-A1 | PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING CURED RELIEF PATTERN | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2023-07-13 | — | — | US | disclosed |
| CN-113820920-B | Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device | 旭化成株式会社 | 2023-07-04 | — | — | CN | disclosed |
| US-11640112-B2 | Photosensitive resin composition and method for producing cured relief pattern | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2023-05-02 | — | — | US | disclosed |
| US-20230104391-A1 | PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR SELECTING PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERNED CURED FILM, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | RESONAC CORPORATION (JP) | 2023-04-06 | — | — | US | disclosed |
| CN-115755526-A | Photosensitive resin composition and method for producing cured relief pattern | 旭化成株式会社 | 2023-03-07 | — | — | CN | disclosed |
| CN-115185157-A | Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device | 旭化成株式会社 | 2022-10-14 | — | — | CN | disclosed |
| CN-115151868-A | Photosensitive resin composition, method for sorting photosensitive resin composition, method for producing patterned cured film, and method for producing semiconductor device | 昭和电工材料株式会社 | 2022-10-04 | — | — | CN | disclosed |
| US-20020196896-A1 | Exposure method, exposure apparatus, X-ray mask, semiconductor device and microstructure | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 2002-12-26 | — | — | US | disclosed |
| EP-1193553-A2 | Exposure method, exposure apparatus, x-ray mask, semiconductor device and microstructure | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 2002-04-03 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12613465-B2 | Photosensitive resin composition and method for producing cured relief pattern | ARCN1, GLRA1, PSMA1 | PSIP1 805/4885CA12 591/4885CA2 242/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.