SCHEMBL767389

SCHEMBL767389

O=[C-]O.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES2 O00748 3/20 0.33
CES1 P23141 3/20 0.33
TSHR P16473 3/20 0.33
ALDH1A1 P00352 2/20 0.33
NAPRT Q6XQN6 2/20 0.33
DAO P14920 1/20 0.33
ALOX15 P16050 1/20 0.33
ALPI P09923 1/20 0.33
PKM P14618 1/20 0.33
PTGS1 P23219 1/20 0.33
XIAP P98170 1/20 0.33
SLC7A5 Q01650 1/20 0.33
HSD17B10 Q99714 2/20 0.32
TDP1 Q9NUW8 3/20 0.32
CA2 P00918 3/20 0.32
CA4 P22748 3/20 0.32
CA12 O43570 2/20 0.32
CA1 P00915 2/20 0.32
CA3 P07451 2/20 0.32
CA9 Q16790 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10801908 0.82 ALDH1A1 (0.40) TSHRALDH1A1ALOX15PTGS1HSD17B10
SCHEMBL47554 0.82 ALDH1A1 (0.40) TSHRALDH1A1ALOX15PTGS1HSD17B10
Oxalic Acid SCHEMBL12231034 0.80 CES2 (0.41) CES2CES1TSHRALDH1A1NAPRT
Acetic Acid SCHEMBL7788632 0.80 CES2 (0.46) CES2CES1TSHRALDH1A1NAPRT
SCHEMBL767028 0.79 MAPT (0.32) CES2CES1TSHRALDH1A1NAPRT
Methane SCHEMBL2440754 0.78 ALDH1A1 (0.38) TSHRALDH1A1ALOX15PTGS1HSD17B10
SCHEMBL126923 0.78 ALDH1A1 (0.38) TSHRALDH1A1ALOX15PTGS1HSD17B10
Bromide SCHEMBL60557 0.78 ALDH1A1 (0.38) TSHRALDH1A1HSD17B10TDP1CA2
SCHEMBL12762137 0.78 ALDH1A1 (0.38) TSHRALDH1A1ALOX15PTGS1HSD17B10
SCHEMBL2058664 0.78 ALDH1A1 (0.38) TSHRALDH1A1ALOX15PTGS1HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 144 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240231230-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2024-07-11 US disclosed
US-20240201593-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2024-06-20 US disclosed
CN-118159910-A Additive-containing silicon-containing resist underlayer film forming composition 日产化学株式会社 2024-06-07 CN disclosed
CN-117940850-A Composition for forming silicon-containing resist underlayer film, laminate using same, and method for producing semiconductor element 日产化学株式会社 2024-04-26 CN disclosed
US-11966164-B2 Semiconductor device production method employing silicon-containing resist underlayer film-forming composition including organic group having ammonium group NISSAN CHEMICAL CORPORATION (JP) 2024-04-23 US disclosed
WO-2024063044-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM 日産化学株式会社 2024-03-28 WO disclosed
CN-117716295-A Composition for forming silicon-containing resist underlayer film and silicon-containing resist underlayer film 日产化学株式会社 2024-03-15 CN disclosed
US-20240069441-A1 COMPOSITION FOR RESIST UNDERLYING FILM FORMATION NISSAN CHEMICAL CORPORATION (JP) 2024-02-29 US disclosed
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
CN-117460995-A Composition for forming underlayer film of silicon-containing resist 日产化学株式会社 2024-01-26 CN disclosed
EP-2538276-A1 COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM CONTAINING SILICON HAVING NITROGEN-CONTAINING RING Nissan Chemical Industries, Ltd. (JP) 2012-12-26 EP disclosed
US-20120315765-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-12-13 US disclosed
EP-2479615-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM Nissan Chemical Industries, Ltd. (JP) 2012-07-25 EP disclosed
US-20120178261-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-07-12 US disclosed
CN-102498440-A Silicon-containing composition having sulfonamide group for forming resist underlayer film NISSAN CHEMICAL IND LTD 2012-06-13 CN disclosed
US-20120070994-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-03-22 US disclosed
US-20110287369-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2011-11-24 US disclosed
EP-2372458-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM FORMATION COMPOSITION HAVING ANION GROUP Nissan Chemical Industries, Ltd. (JP) 2011-10-05 EP disclosed
US-6692883-B2 GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER FUJI PHOTO FILM CO., LTD. (JP) 2004-02-17 US disclosed
US-20020012866-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-01-31 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120315765-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING SRSF1, SRSF7, SRRM2 CES2 682/4885CES1 452/4885TSHR 3940/4885
US-20120070994-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND SMC3, SRSF3, SRSF9 CES2 1618/4885CES1 1160/4885TSHR 2660/4885
US-20110287369-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP SIK2, SRRM2, SRSF7 CES2 2212/4885CES1 1740/4885TSHR 3038/4885
US-20120178261-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM STS, SI, MUS81 CES2 167/4885CES1 270/4885TSHR 4599/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.